Comment on “Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy” [Appl. Phys. Lett. 86, 042104 (2005)]

Lin, Yow-Jon
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p216101
Academic Journal
The article presents the author's comment on unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy. For the 3% Al-doped ZnO film, the authors have measured a reduction in the band gap of ,150 meV with respect to the undoped and the 1% doped one. However, the authors neglected important features of the problem. Photoluminescence, surface photovoltage spectroscopy, modulated specular reflectance spectroscopies and optical transmittance measurements may be carried out to investigate changes in the band gap.


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