Fabry–Perot Gunn laser

Chung, S.; Balkan, N.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211111
Academic Journal
A truly monopolar GaAs Fabry–Perot cavity Gunn laser is demonstrated. The device is grown by metalorganic chemical vapor deposition on a semi-insulating GaAs substrate and consists of an n=4.6×1017 cm-3 doped GaAs active layer sandwiched between the AlxGa1-xAs (x=0.32) waveguiding layers. The operation of the device is based on the band to band recombination of impact-ionized nonequilibrium electron-hole pairs in the propagating high field domains in the Gunn diode, which is placed in a Fabry–Perot cavity, and biased above the threshold of negative differential resistance. Lasing from the device is observed at temperature T>=95 K. The maximum power emitted from the device is P=25.4 μW at λ=840 nm and T=95 K.


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