TITLE

Fabry–Perot Gunn laser

AUTHOR(S)
Chung, S.; Balkan, N.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211111
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A truly monopolar GaAs Fabry–Perot cavity Gunn laser is demonstrated. The device is grown by metalorganic chemical vapor deposition on a semi-insulating GaAs substrate and consists of an n=4.6×1017 cm-3 doped GaAs active layer sandwiched between the AlxGa1-xAs (x=0.32) waveguiding layers. The operation of the device is based on the band to band recombination of impact-ionized nonequilibrium electron-hole pairs in the propagating high field domains in the Gunn diode, which is placed in a Fabry–Perot cavity, and biased above the threshold of negative differential resistance. Lasing from the device is observed at temperature T>=95 K. The maximum power emitted from the device is P=25.4 μW at λ=840 nm and T=95 K.
ACCESSION #
17226916

 

Related Articles

  • Fabrication and optical investigation of a high-density GaN nanowire array. Wang, T.; Ranalli, F.; Parbrook, P. J.; Airey, R.; Bai, J.; Rattlidge, R.; Hill, G. // Applied Physics Letters;3/7/2005, Vol. 86 Issue 10, p103103 

    A high-density GaN nanowire array has been successfully fabricated through self-organized nanometer-sized holes as mask appearing in InGaN layer. The self-organized nanometer-sized holes are naturally formed during InGaN epitaxial growth using metalorganic chemical vapor deposition technology by...

  • Fractal growth of sp3-bonded 5H-BN microcones by plasma-assisted laser chemical vapor deposition. Komatsu, Shojiro; Kazami, Daisuke; Tanaka, Hironori; Moriyoshi, Yusuke; Shiratani, Masaharu; Okada, Katsuyuki // Journal of Applied Physics;6/15/2006, Vol. 99 Issue 12, p123512 

    It was reported previously that sp3-bonded 5H-BN films grown by plasma-assisted laser chemical vapor deposition (PAL-CVD) exhibited cone-shaped units with dimensions on the order of ∼10 μm prevailing over the surface, and which contributed to excellent electron field emission properties....

  • Power dependence of NF3 plasma stability for in situ chamber cleaning. Bing Ji, Eugene J.; Elder, Delwin L.; Yang, James H.; Badowski, Peter R.; Karwacki, Eugene J. // Journal of Applied Physics;4/15/2004, Vol. 95 Issue 8, p4446 

    We investigated the stability of NF3 plasmas for in situ chamber cleaning in a production plasma-enhanced chemical vapor deposition reactor. An rf power threshold, normalized by NF3 molar number (Pnn) and NF3 flow rate (Pnf), is observed to be PnnPnf=39 (W/μ mol)(W/sccm) for stable plasmas...

  • Structure and luminescence of pyramid-shaped CdSe nanostructures grown by metalorganic chemical vapor deposition. Shan, C. X.; Liu, Z.; Ng, C. M.; Hark, S. K. // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213106 

    Sharply pointed pyramidal CdSe nanostructures were grown on Si substrates by metalorganic chemical vapor deposition using Au as a catalyst. Scanning electron microscopy analysis confirms their shape; x-ray diffraction, in combination with electron diffraction, reveals that they have the zinc...

  • Infrared lasing in InN nanobelts. Hu, Ming-Shien; Hsu, Geng-Ming; Chen, Kuei-Hsien; Yu, Chia-Ju; Hsu, Hsu-Cheng; Chen, Li-Chyong; Hwang, Jih-Shang; Hong, Lu-Sheng; Chen, Yang-Fang // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p123109 

    Infrared lasing from single-crystalline InN nanobelts grown by metal organic chemical vapor deposition was demonstrated. Transmission electron microscopy studies revealed that the InN nanobelts of rectangular cross section grew along [110] direction and were enclosed by ±(001) and...

  • Characterization of deep-levels in silicon nanowires by low-frequency noise spectroscopy. Motayed, Abhishek; Krylyuk, Sergiy; Davydov, Albert V. // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p113107 

    We have used low-frequency noise (LFN) spectroscopy to characterize generation-recombination (G-R) centers in silicon nanowires grown using chemical vapor deposition. The LFN spectra showed Lorentzian behavior with well-defined corner-frequency indicative of single G-R center in the bandgap....

  • Impact of residual carbon on two-dimensional electron gas properties in AlxGa1-xN/GaN heterostructure. Chen, Jr-Tai; Forsberg, Urban; Janzén, Erik // Applied Physics Letters;5/13/2013, Vol. 102 Issue 19, p193506 

    High tuneability of residual carbon doping is developed in a hot-wall metalorganic chemical vapor deposition reactor. Two orders of temperature-tuned carbon concentration, from ∼2 × 1018 cm-3 down to ∼1 × 1016 cm-3, can be effectively controlled in the growth of the GaN buffer...

  • Vapor-liquid-solid growth of germanium nanostructures on silicon. Dailey, J. W.; Taraci, J.; Clement, T.; Smith, David J.; Drucker, Jeff; Picraux, S. T. // Journal of Applied Physics;12/15/2004, Vol. 96 Issue 12, p7556 

    The pressure and temperature dependencies for vapor-liquid-solid (VLS) growth of Ge nanostructures on Si using chemical vapor deposition are reported. Gold nanodots self-assembled by evaporation on clean hydrogen-terminated and heated Si substrates are used to seed the liquid eutectic VLS...

  • Defect reduction of GaAs/Si epitaxy by aspect ratio trapping. Li, J. Z.; Bai, J.; Major, C.; Carroll, M.; Lochtefeld, A.; Shellenbarger, Z. // Journal of Applied Physics;May2008, Vol. 103 Issue 10, p106102 

    We report on the metallorganic chemical vapor deposition growth of GaAs on patterned Si (001) substrates, which utilizes the aspect ratio trapping method. It was found that when growing GaAs above the SiO2 trenched region, coalescence-induced threading dislocations and stacking faults originated...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics