Strong near-infrared photoluminescence in erbium/ytterbium codoped porous silicon

Luo, L.; Zhang, X. X.; Li, K. F.; Cheah, K. W.; Gong, M. L.; Shi, J. X.; Wong, W. K.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p212505
Academic Journal
Erbium ions and ytterbium ions (1021/cm3) were electrochemically codoped into porous silicon. When compared with the Er-doped porous silicon we found two salient features in its photoluminescence. One is that the 1.54 μm emission of Er3+ ions was 50 times stronger under 980 nm laser excitation at room temperature. This is due to the high efficiency of the Yb3+→Er3+ energy transfer. The other is that the photoluminescence intensity increases rapidly with temperature, while that in Er-doped porous silicon decreases monotonically with temperature. Our results show that the codoped Er/Yb porous silicon has a promising potential for the application in optical communications.


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