Phonon confinement effect of silicon nanowires synthesized by laser ablation

Fukata, N.; Oshima, T.; Murakami, K.; Kizuka, T.; Tsurui, T.; Ito, S.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p213112
Academic Journal
A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift and broadening can be interpreted by the phonon confinement effect. Further thermal oxidation produced a reverse change; namely, an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.


Related Articles

  • Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors. Gilbert, M. J.; Akis, R.; Ferry, D. K. // Journal of Applied Physics;11/1/2005, Vol. 98 Issue 9, p094303 

    As transistors get smaller, the simulations require full quantum-mechanical treatments. Most such approaches have treated the transport as ballistic, ignoring the scattering that is known to occur in such devices. We present the results of a three-dimensional, self-consistent quantum simulation...

  • Relaxation of excited donor states in silicon with emission of intervalley phonons. Tsyplenkov, V. V.; Demidov, E. V.; Kovalevsky, K. A.; Shastin, V. N. // Semiconductors;Sep2008, Vol. 42 Issue 9, p1016 

    The process of low-temperature relaxation of excited states of Group V donors in silicon due to coupling of electrons bound at Coulomb centers with intervalley phonons is analyzed. The rate of transitions from the 2 p 0 state to the group of 1 s( E, T 2) states with emission of the intervalley...

  • Effects of periodic delta-doping on the properties of GaN:Si films grown on Si (111) substrates. Wang, L. S.; Zang, K. Y.; Tripathy, S.; Chua, S. J. // Applied Physics Letters;12/13/2004, Vol. 85 Issue 24, p5881 

    In this study, the effects of periodic Si delta-doping on the morphological and optical properties of GaN films grown on Si (111) substrate have been investigated. It is found that the flow rate of Si dopant during growth significantly affects the surface morphology, structural and optical...

  • Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering. Letcher, Jeffrey J.; Kang, Kwangu; Cahill, David G.; Dlott, Dana D. // Applied Physics Letters;6/18/2007, Vol. 90 Issue 25, p252104 

    The relaxation times T1 of nonequilibrium populations of elementary excitations in Si are studied by time-resolved Raman scattering using a subpicosecond pump-probe method. Incoherent anti-Stokes Raman scattering is used to monitor the decay of the nonequilibrium populations of holes and the...

  • Phonons in Ge nanowires. Peelaers, H.; Partoens, B.; Peeters, F. M. // Applied Physics Letters;9/21/2009, Vol. 95 Issue 12, p122110 

    The phonon spectra of thin freestanding, hydrogen passivated, Ge nanowires are calculated by ab initio techniques. The effect of confinement on the phonon modes as caused by the small diameters of the wires is investigated. Confinement causes a hardening of the optical modes and a softening of...

  • Lattice dynamics of ultrasmall silicon nanostructures. Hepplestone, S. P.; Srivastava, G. P. // Applied Physics Letters;12/5/2005, Vol. 87 Issue 23, p231906 

    A systematic study of the lattice dynamics of ultrasmall silicon nanostructures (nanoslabs, nanowires, and nanodots) is presented from the application of an adiabatic bond charge model. Characteristic features and trends unique to these structures are examined thoroughly. The smallest...

  • Experimental evidence of the role of quasilocalized phonons in the thermal conductivity of simple alcohols in orientationally ordered crystalline phases. Krivchikov, A. I.; Sharapova, I. V.; Korolyuk, O. A.; Romantsova, O. O.; Bermejo, F. J. // Low Temperature Physics;Nov2009, Vol. 35 Issue 11, p891 

    The thermal conductivity κ(T) of crystalline alcohols (methyl, ethyl and 1-propyl) within their thermodynamic equilibrium phases for T>=2 K and under the equilibrium vapor pressures has been measured and analyzed. While such compounds usually exhibit a rich polymorphism including amorphous...

  • Role of dispersion on phononic thermal boundary conductance. Duda, John C.; Beechem, Thomas E.; Smoyer, Justin L.; Norris, Pamela M.; Hopkins, Patrick E. // Journal of Applied Physics;Oct2010, Vol. 108 Issue 7, p073515 

    The diffuse mismatch model (DMM) is one of the most widely implemented models for predicting thermal boundary conductance at interfaces where phonons dominate interfacial thermal transport. In the original presentation of the DMM, the materials comprising the interface were described as Debye...

  • Isotope-induced elastic scattering of optical phonons in individual suspended single-walled carbon nanotubes. Zhao, Pei; Einarsson, Erik; Xiang, Rong; Murakami, Yoichi; Chiashi, Shohei; Shiomi, Junichiro; Maruyama, Shigeo // Applied Physics Letters;8/29/2011, Vol. 99 Issue 9, p093104 

    Isotope-induced scattering of optical phonons in individual single-walled carbon nanotubes (SWNTs) was investigated by resonance Raman scattering measurements of more than 600 suspended, isotope-mixed SWNTs. The G+ and G- features in the SWNT G-band exhibit broadening of up to 80% and 25%,...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics