Environment of hafnium and silicon in Hf-based dielectric films: An atomistic study by x-ray absorption spectroscopy and x-ray diffraction

Morais, J.; Miotti, L.; Bastos, K. P.; Teixeira, S. R.; Baumvol, I. J. R.; Rotondaro, A. L. P.; Chambers, J. J.; Visokay, M. R.; Colombo, L.; Alves, M. C. Martins
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p212906
Academic Journal
The atomic structure of HfSiO and HfSiON was investigated before and after thermal annealing using x-ray diffraction and x-ray absorption spectroscopy. In HfSiO, the Hf atoms are arranged in a monoclinic HfO2 structure with Hf as second nearest neighbors, while Si is in a SiO2 environment. Thermal annealing induces crystallization of HfSiO with subtle changes in Hf–Hf distances. In the case of HfSiON, a stable structure is observed around the Hf atoms, which remains unaffected after annealing. Nitrogen is present in the first coordination shell of the Hf atoms, with Si in a SiON environment.


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