1.55 μm GaNAsSb photodetector on GaAs

Luo, H.; Gupta, J. A.; Liu, H. C.
May 2005
Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211121
Academic Journal
We report a GaNAsSb p-i-n photodetector operating in the 1.55-μm-wavelength region. The device consists of two undoped 70-Å GaN0.025As0.615Sb0.36 quantum wells sandwiched between p- and n- GaAs barriers grown by molecular-beam epitaxy on GaAs substrate. At 1.55 μm, responsivities of 0.016 and 0.01 A/W are demonstrated for as-deposited and annealed samples, respectively, which correspond to absorption coefficients of 1.3×104 and 0.82×104 cm-1.


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