TITLE

Enhanced boron diffusion in excimer laser preannealed Si

AUTHOR(S)
Monakhov, E. V.; Svensson, B. G.; Linnarsson, M. K.; La Magna, A.; Spinella, C.; Bongiorno, C.; Privitera, V.; Fortunato, G.; Mariucci, L.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p151902
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated boron diffusion during rapid thermal annealing in Si implanted with boron using an energy of 1 keV and a dose of 1×1016 cm-2. Two types of samples have been studied: As-implanted and pretreated with excimer laser annealing. For both types an enhanced diffusion of boron has been observed with an enhancement by a factor of 3–5 over the “standard” diffusion. It is suggested that the high concentration of implanted boron is a dominant factor for the diffusion enhancement as compared to the effect of implantation-induced damage. The data indicate that the proximity of the surface can also affect the boron diffusion enhancement.
ACCESSION #
17185491

 

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