Experimental demonstration of pseudomorphic heterojunction bipolar transistors with cutoff frequencies above 600 GHz

Hafez, Walid; Feng, Milton
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152101
Academic Journal
Pseudomorphic InP/InGaAs heterojunction bipolar transistors (PHBTs) using a compositionally graded collector (10% indium grading) and graded base (6% indium grading) to reduce the transit time of the device are reported. A 0.4×6 μm2 HBT achieves excellent ƒT values of 604 GHz (associated ƒMAX=246 GHz) at a collector current density of 16.8 mA/μm2, with a dc gain of 65 and a breakdown voltage of BVCEO=1.7 V.


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