TITLE

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

AUTHOR(S)
Frank, Martin M.; Wilk, Glen D.; Starodub, Dmitri; Gustafsson, Torgny; Garfunkel, Eric; Chabal, Yves J.; Grazul, John; Muller, David A.
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152904
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III–V semiconductors have long proven elusive. High-permittivity (high-κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath HfO2 during growth, while thinning occurs during Al2O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ∼600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments.
ACCESSION #
17185481

 

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