Magnetic directed assembly of molecular junctions

Long, David P.; Patterson, Charles H.; Moore, Martin H.; Seferos, Dwight S.; Bazan, Guillermo C.; Kushmerick, James G.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153105
Academic Journal
We present a technique for fabricating molecular junctions for molecular electronic devices. Silica microspheres are rendered magnetically susceptible and electrically conductive by the sequential deposition of nickel and gold films. The metallized microspheres undergo directed assembly into lithographically defined magnetic arrays functionalized with self-assembled monolayers of prototypical molecular wire candidates. We characterize the resulting junctions by scanning electron microscopy and measure their current-voltage characteristics. Magnetic directed assembly provides a wafer-level route for the fabrication of molecular junctions and opens up the potential for hybrid complementary metal-oxide semiconductor/molecular electronic applications.


Related Articles

  • Optical field enhancement effects in laser-assisted particle removal. Mosbacher, M.; Münzer, H.-J.; Zimmermann, J.; Solis, J.; Boneberg, J.; Leiderer, P. // Applied Physics A: Materials Science & Processing;2001, Vol. 72 Issue 1, p41 

    Abstract. We report on the role of local optical field enhancement in the neighborhood of particles during dry laser cleaning (DLC) of silicon wafer surfaces. Samples covered with spherical colloidal particles (PS, SiO[sub 2]) and arbitrarily shaped Al[sub 2]O[sub 3] particles with diameters...

  • Creating a single twin boundary between two CdTe (111) wafers with controlled rotation angle by wafer bonding. Sun, Ce; Lu, Ning; Wang, Jinguo; Lee, Jihyung; Peng, Xin; Klie, Robert F.; Kim, Moon J. // Applied Physics Letters;12/16/2013, Vol. 103 Issue 25, p252104 

    The single twin boundary with crystallographic orientation relationship ([formula])//(111) [[formula]]//[[formula]] was created by wafer bonding. Electron diffraction patterns and high-resolution transmission electron microscopy images demonstrated the well control of the rotation angle between...

  • Development of Sample Planning for Wafer Defect Inspection. Nagai, T.; Hamaguchi, A.; Yamazaki, Y.; Yamasaki, M.; Kaga, Y. // AIP Conference Proceedings;2005, Vol. 788 Issue 1, p628 

    Sample planning for wafer defect inspection is a critical issue for reducing total cost. It is important to develop a cost-effective sampling plan. In the present study, using three parameters (gain, coefficient of gain variation, and payback period), an optimized sampling plan has been...

  • Mapping of trap densities and energy levels in semiconductors using a lock-in infrared camera technique. Pohl, Peter; Schmidt, Jan; Bothe, Karsten; Brendel, Rolf // Applied Physics Letters;10/3/2005, Vol. 87 Issue 14, p142104 

    We examine nonrecombination active minority-carrier trapping centers in crystalline silicon using a lock-in infrared camera technique. Application of a simple trapping model to the injection-dependent lifetime data obtained from the infrared emission signal results in high-resolution mappings...

  • The study of charge carrier kinetics in semiconductors by microwave conductivity measurements. Kunst, M.; Beck, G. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3558 

    Presents a study that investigated the reliability and the possibilities of microwave conductivity measurements. Background for excess conductivity measurements in the microwave range; Quantitative relationship between the reflected microwave signal and the change in conductivity for a wafer of...

  • High conductivity carbon nanotube wires from radial densification and ionic doping. Alvarenga, Jack; Jarosz, Paul R.; Schauerman, Chris M.; Moses, Brian T.; Landi, Brian J.; Cress, Cory D.; Raffaelle, Ryne P. // Applied Physics Letters;11/1/2010, Vol. 97 Issue 18, p182106 

    Application of drawing dies to radially densify sheets of carbon nanotubes (CNTs) into bulk wires has shown the ability to control electrical conductivity and wire density. Simultaneous use of KAuBr4 doping solution, during wire drawing, has led to an electrical conductivity in the CNT wire of...

  • High-quality factor optical microcavities using oxide apertured micropillars. Stoltz, N. G.; Rakher, M.; Strauf, S.; Badolato, A.; Lofgreen, D. D.; Petroff, P. M.; Coldren, L. A.; Bouwmeester, D. // Applied Physics Letters;7/18/2005, Vol. 87 Issue 3, p031105 

    An oxide aperture is used to confine optical modes in a micropillar structure. This method overcomes the limitations due to sidewall scattering loss typical in semiconductor etched micropillars. High cavity quality factors (Q) up to 48 000 are determined by external Fabry–Perot cavity...

  • Automating the CD-SEM recipe process for 45nm technologies. Chan, Kevin; Jackson, Tom; Futatsuya, Hiroki; Yamamoto, Hajime; Osawa, Morimi; Peltinov, Ram // Microlithography World;Aug2008, Vol. 17 Issue 3, p14 

    The article discusses the automation of the critical dimension-scanning electron microscopy (CD-SEM) recipe process for 45 nanometer (nm) technologies based on an experiment conducted by Fujitsu. It defines a recipe as a predefined set of tool instructions on specific target areas for reviewing...

  • Correlation of cleaning conditions and wafer out-gassing. Sok-Hyung Han; Tae-Ho Hwang; Si-Chul Kim; Seung-Ha Park; Byung-Sul Ryu // Solid State Phenomena;2014, Vol. 219, p260 

    To remove the oxide layer, BOE (Buffered Oxide Etchant) is widely used solution in semiconductor fabrication process. When using the BOE solution in single type equipment, NH3 ions are created by the chemical reaction. Because BOE is a mixture solution of NH4F and HF. And created NH3 ions make...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics