Scanning-tunneling-microscopy observation of heterojunctions with a type-II band alignment in ZnSe/BeTe multiple quantum wells

Yamakawa, I.; Akanuma, Y.; Akimoto, R.; Nakamura, A.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153112
Academic Journal
Heterojunctions of ZnSe/BeTe multiple quantum wells (MQW) with a type-II band alignment have been investigated by cross-sectional scanning tunneling microscopy (STM). The brightness of the ZnSe and BeTe layers in the cross-sectional STM image is inverted between filled- and empty-state images, taken by switching the bias polarity of the sample bias voltage in constant current mode. Such inversion of the brightness indicates changes in the band offsets of the conduction and valence bands between the ZnSe and BeTe layers of the type-II MQW. The roughness of interfaces in the filled state images has also been investigated on an atomic scale. It is found that the roughness amplitude Δ, and the correlation length Λ, which characterize the observed interfacial roughness, are comparable to the values observed for III-V heterostructures.


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