TITLE

Fabrication of nanoscale C60 field-effect transistors with carbon nanotubes

AUTHOR(S)
Horiuchi, Kazunaga; Kato, Tomohiro; Hashii, Shinobu; Hashimoto, Akira; Sasaki, Takahiko; Aoki, Nobuyuki; Ochiai, Yuichi
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A nanoscale C60 field-effect transistor has been fabricated with carbon nanotubes (C60CNT-FET). A wire of multiwalled carbon nanotube has been anchored by metal pads on a Si wafer, and cut by bombardment with focused Ga2+ ion beam. The cut ends of the wire have been integrated as source-drain electrodes into the C60CNT-FET, with a vacuum evaporated C60 thin film. The C60CNT-FET has exhibited an excellent performance of a low-voltage drive operation, without any short-channel effect even at as small as 100 nm of channel length.
ACCESSION #
17185460

 

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