Origin of the stress-induced leakage currents in Al–Ta2O5/SiO2–Si structures

Novkovski, N.; Atanassova, E.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152104
Academic Journal
The leakage currents in the Al–Ta2O5/SiO2–Si structures increase as a result of the current stress. The case of the constant current stress was studied and it was found that the I–V characteristics of both unstressed and stressed samples can be described by the previously developed model involving Poole–Frenkel effect in the Ta2O5 and both hopping conductivity and tunneling in the SiO2. After extracting the parameters for both layers from the fitting of the theoretical curves to the experimental results, it was found that the main reason for the increased leakage is the partial destruction of the SiO2 layer.


Related Articles

  • Growth stress in SiO2 during oxidation of SiC fibers. Hay, R. S. // Journal of Applied Physics;Mar2012, Vol. 111 Issue 6, p063527 

    A method to calculate growth stress in SiO2 scales formed during SiC fiber oxidation was developed. Calculations were done for Hi-NicalonTM-S SiC fibers using previously measured Deal-Grove oxidation kinetics parameters. Initial compressive stresses in SiO2 of ∼25 GPa from the 2.2×...

  • On the Modification of a Silicon Surface Studied by Scanning Tunneling Microscopy. Kornilov, V. M.; Lachinov, A. N. // Semiconductors;Mar2003, Vol. 37 Issue 3, p307 

    The results of investigating the surface of Si with a thin oxide layer by scanning tunneling microscopy in air are reported. The tunneling current is shown to represent a superposition of several components. This circumstance makes it possible to suggest that a pseudoprofile is detected instead...

  • Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications. Ito, Toshihide; Mitani, Yuuichiro; Nakasaki, Yasushi; Koike, Masahiro; Konno, Takuya; Matsuba, Hiroshi; Kai, Tetsuya; Kaneko, Wakana; Ozawa, Yoshio // Applied Physics Letters;2/13/2012, Vol. 100 Issue 7, p072902 

    Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading...

  • Dielectric characteristics of CuO-NaO-SiO glasses with cole-cole plots technique and ac conductivity study. Salman, F. // Glass Physics & Chemistry;Mar2013, Vol. 39 Issue 2, p150 

    A series of glasses with formula (SiO)(NaO)(CuO) with (0.0 ≤ x ≤ 0.20) were prepared and studied by means of ac measurements in the frequency range 20 kHz-10 MHz at room temperature. The study of frequency dependence of both dielectric constant ɛ′ and dielectric loss...

  • Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium. Choi, Youn Sung; Lim, Ji-Song; Numata, Toshinori; Nishida, Toshikazu; Thompson, Scott E. // Journal of Applied Physics;Nov2007, Vol. 102 Issue 10, p104507 

    Strain altered electron gate tunneling current is measured for germanium (Ge) metal–oxide–semiconductor devices with HfO2 gate dielectric. Uniaxial mechanical stress is applied using four-point wafer bending along [100] and [110] directions to extract both dilation and shear...

  • Bipolar resistive electrical switching of silver tetracyanoquinodimethane based memory cells with dedicated silicon dioxide “switching layer”. Müller, R.; Genoe, J.; Heremans, P. // Applied Physics Letters;9/28/2009, Vol. 95 Issue 13, p133509 

    We demonstrate reliable and durable (>100 write/erase cycles) bipolar resistive electrical switching of silver tetracyanoquinodimethane (AgTCNQ) based memories by incorporating a dedicated SiO2 “switching layer” and limiting the on state current by a current compliance. Switching...

  • Nanofabrication on Si oxide with scanning tunneling microscope: Mechanism of the low-energy... Li, Nan; Yoshinobu, Tatsuo // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1621 

    Studies the nanofabrication on Si oxide with scanning tunneling microscopy. Mechanism of the low-energy electron-stimulated reaction; Electron-induced etching; Patterning of rings on a thin Si-oxide layer.

  • High-field-induced voltage-dependent oxide charge. Olivo, P.; Riccò, B.; Sangiorgi, E. // Applied Physics Letters;4/28/1986, Vol. 48 Issue 17, p1135 

    In this work, we investigate the effects of nondisruptive high-field stress on the tunneling characteristics of thin SiO2 films (<100 Ã…) and show that after the stress the charge trapped within the oxide reversibly depends on the applied voltage. This is explained with a model where...

  • Electrical properties and modeling of ultrathin impurity-doped silicon dioxides. Chang, Wai-Jyh; Houng, Mau-Phon; Wang, Yeong-Her // Journal of Applied Physics;11/15/2001, Vol. 90 Issue 10, p5171 

    The electrical properties of silicon dioxides doped with impurities (fluorine and/or nitrogen) are investigated in this article. Pure silicon dioxide (SiO[sub 2]), fluorine-doped silicon oxide (SiOF), nitrogen-doped silicon oxide (SiON), and nitrogen-doped SiOF (SiOFN) are our choices for...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics