Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy

Yoshikawa, A.; Hashimoto, N.; Kikukawa, N.; Che, S. B.; Ishitani, Y.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153115
Academic Journal
We investigated the growth behaviors of InN quantum dots (QDs) on N-polarity GaN by molecular-beam epitaxy. The N-polarity growth has been intentionally used to raise the temperature to facilitate formation of high-quality dots. It was found that the InN QDs could be grown up to 550 °C the Stranski–Kastanov growth mode with the wetting layer thickness of about 1 monolayer, which was confirmed by the simultaneous in situ observations of reflection high-energy electron diffraction and spectroscopic ellipsometry. The density and the diameter of typical InN QDs grown at 450–550 °C were the order of 1011 cm-2 and 15–20 nm, respectively.


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