TITLE

Thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy

AUTHOR(S)
Yamaguchi, Shigeo; Nagawa, Yoshihito; Kaiwa, Nakaba; Yamamoto, Atsushi
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p153504
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We studied the thermoelectric properties of InSb and Ga0.03In0.97Sb thin films grown by metalorganic vapor-phase epitaxy targeting a thermoelectric device with a high electron mobility. For InSb on sapphire, the maximum power factor (Pf) was 3.5×10-3 W/mK at 723 K, and for InSb on SiO2 glass, the maximum Pf was 2.4×10-3 W/mK at 723 K. For Ga0.03In0.97Sb on sapphire, the maximum Pf was 2.5×10-3 W/mK at 723 K, and for Ga0.03In0.97Sb on SiO2 glass, the maximum Pf was 3.4×10-3 W/mK at 723 K.
ACCESSION #
17185419

 

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