Electrical characterization of Er- and Pr-implanted GaN films

Song, S. F.; Chen, W. D.; Chunguang Zhang; Liufang Bian; Hsu, C. C.; Lu, L. W.; Zhang, Y. H.; Jianjun Zhu
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152111
Academic Journal
Hall, current–voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 °C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 °C for 30 min. The origins of the deep defect levels are discussed.


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