Localized exciton dynamics in nonpolar [formula] InxGa1-xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

Onuma, T.; Chakraborty, A.; Haskell, B. A.; Keller, S.; DenBaars, S. P.; Speck, J. S.; Nakamura, S.; Mishra, U. K.; Sota, T.; Chichibu, S. F.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p151918
Academic Journal
Beneficial effects of the localized excitons were confirmed in nonpolar (112Íž0) InxGa1-x N multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25% and 17% for the peaks at 2.92 and 2.60 eV, respectively.


Related Articles

  • Optical properties of a-plane (Al, Ga)N/GaN multiple quantum wells grown on strain engineered Zn1-xMgxO layers by molecular beam epitaxy. Xia, Y.; Brault, J.; Nemoz, M.; Teisseire, M.; Vinter, B.; Leroux, M.; Chauveau, J.-M. // Applied Physics Letters;12/26/2011, Vol. 99 Issue 26, p261910 

    Nonpolar [formula] Al0.2Ga0.8N/GaN multiple quantum wells (MQWs) have been grown by molecular beam epitaxy on [formula] Zn0.74Mg0.26O templates on r-plane sapphire substrates. The quantum wells exhibit well-resolved photoluminescence peaks in the ultra-violet region, and no sign of quantum...

  • Investigation of excitons in AlGaN/GaN multiple quantum wells by lateral photocurrent and photoluminescence spectroscopies. Friel, I.; Thomidis, C.; Fedyunin, Y.; Moustakas, T.D. // Journal of Applied Physics;4/1/2004, Vol. 95 Issue 7, p3495 

    We report on the investigation of excitons in Al[sub 0.2]Ga[sub 0.8]N/GaN multiple quantum wells (MQWs) by lateral photocurrent, and photoluminescence (PL) spectroscopies over the temperature range from 9 to 300 K. The MQWs were deposited homoepitaxially by plasma-assisted molecular-beam epitaxy...

  • Proposal and achievement of novel structure InN/GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix. Yoshikawa, A.; Che, S. B.; Yamaguchi, W.; Saito, H.; Wang, X. Q.; Ishitani, Y.; Hwang, E. S. // Applied Physics Letters;2/12/2007, Vol. 90 Issue 7, p073101 

    The authors propose and demonstrate the fabrication of InN/GaN multiple quantum well (MQW) consisting of 1 ML and fractional monolayer InN well insertion in GaN matrix under In-polarity growth regime. Since the critical thickness of InN epitaxy on GaN is about 1 ML and the growth temperature for...

  • Temperature-dependent Radiative Lifetimes of Excitons in Non-Polar GaN/AlGaN Quantum Wells. Rudin, S.; Garrett, G. A.; Shen, H.; Wraback, M.; Imer, B.; Haskell, B.; Speck, J. S.; Keller, S.; Nakamura, S.; DenBaars, S. P. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p315 

    We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width. © 2007 American...

  • Long exciton spin relaxation in coupled quantum wells. Kowalik-Seidl, K.; Vögele, X. P.; Rimpfl, B. N.; Manus, S.; Kotthaus, J. P.; Schuh, D.; Wegscheider, W.; Holleitner, A. W. // Applied Physics Letters;7/5/2010, Vol. 97 Issue 1, p011104 

    Spatially indirect excitons in a coupled quantum well structure were studied by means of polarization and time-resolved photoluminescence. A strong degree of circular polarization (>50%) in emission was achieved when the excitation energy was tuned into resonance with the direct exciton state....

  • Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures. Della Sala, Fabio; Di Carlo, Aldo; Lugli, Paolo; Bernardini, Fabio; Fiorentini, Vincenzo; Scholz, Reinhard; Jancu, Jean-Marc // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2002 

    Investigates the free-carrier screening of macroscopic polarization fields in wurtzite gallium nitride (GaN)/indium gallium nitride (InGaN) quantum well lasers. Use of self-consistent tight-binding approach; High carrier concentrations found experimentally in nitride lasers.

  • Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy. Corfdir, P.; Lefebvre, P.; Levrat, J.; Dussaigne, A.; Ganière, J.-D.; Martin, D; Ristic, J.; Zhu, T.; Grandjean, N.; Deveaud-Plédran, B. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonly encountered extended defect of a-plane...

  • Photoluminescence study of semipolar [formula] InGaN/GaN multiple quantum wells grown by selective area epitaxy. Yu, Hongbo; Lee, L. K.; Jung, Taeil; Ku, P. C. // Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p141906 

    Semipolar InGaN/GaN multiple quantum wells (MQWs) were fabricated on the {1011} facets of GaN pyramidal structures by selective area epitaxy. Optical properties of the MQWs were investigated by photoluminescence (PL) in comparison with (0001) MQWs. Compared with (0001) MQWs,...

  • High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy. Shen, X. Q.; Ide, T.; Shimizu, M.; Okumura, H. // Journal of Applied Physics;5/15/2001, Vol. 89 Issue 10, p5731 

    High-quality InGaN/GaN multiple-quantum wells (MQWs) with different In fractions varying from 0.04 to 0.30 have been grown on Ga-polarity GaN by N[sub 2] plasma-assisted molecular-beam epitaxy (rf-MBE). High-resolution x-ray diffraction results have indicated that the high interface quality and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics