Shallow trap states in pentacene thin films from molecular sliding

Kang, Joo H.; da Silva Filho, Demetrio; Bredas, Jean-Luc; Zhu, X.-Y.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152115
Academic Journal
Petacene is one of the most promising organic semiconductors for thin-film transistors. Transport measurements in the past have established the presence of shallow traps but their origins have remained a mystery. Here we show that shallow traps in vapor-deposited crystalline pentacene thin films are due to local defects resulting from the sliding of pentacene molecules along their long molecular axis, while two-dimensional crystalline packing is maintained. Electronic structural calculation confirms that these sliding defects are shallow-charge traps with energies ≤100 meV above (below) the valence band maximum (conduction band minimum).


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