p-type conductivity in cubic (Ga,Mn)N thin films

Edmonds, K. W.; Novikov, S. V.; Sawicki, M.; Campion, R. P.; Staddon, C. R.; Giddings, A. D.; Zhao, L. X.; Wang, K. Y.; Dietl, T.; Foxon, C. T.; Gallagher, B. L.
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152114
Academic Journal
The electrical properties of p-type cubic (Ga,Mn)N films are reported. Hole concentrations above 1018 cm-3 at room temperature are observed. Activated behavior is observed down to 150 K, with an acceptor ionization energy of around 45–60 meV. The dependence of hole concentration and ionization energy on Mn concentration indicates that the shallow acceptor level is not simply due to unintentional codoping. Thermopower measurements on freestanding films, capacitance–voltage profilometry, and the dependence of conductivity on thickness and growth temperature, all show that this is not due to diffusion into the substrate. We therefore associate the p-type conductivity with the presence of the Mn in the cubic GaN films.


Related Articles

  • Surface polarity dependence of Mg doping in GaN grown by molecular-beam epitaxy. Li, L. K.; Li, L.K.; Jurkovic, M. J.; Jurkovic, M.J.; Wang, W. I.; Wang, W.I.; Van Hove, J. M.; Van Hove, J.M.; Chow, P. P.; Chow, P.P. // Applied Physics Letters;3/27/2000, Vol. 76 Issue 13 

    The effect of surface polarity on the growth of Mg-doped GaN thin films on c-plane sapphire substrates by molecular-beam epitaxy has been investigated. The doping behavior of Mg and resulting conductivity of the doped layers were found to strongly depend on the surface polarity of the growing...

  • Three-color integration on rare-earth-doped GaN electroluminescent thin films. Wang, Y. Q.; Steckl, A. J. // Applied Physics Letters;1/27/2003, Vol. 82 Issue 4, p502 

    We have realized full color integration on rare-earth-doped thin-film electroluminescent (EL) GaN using lateral integration. Tm, Er, and Eu dopants were in situ doped into GaN thin films during growth in order to obtain blue, green, and red emission, respectively. Three color pixel arrays have...

  • Isoelectronic As doping effects on the optical characteristics of GaN films grown by metalorganic chemical-vapor deposition. Huang, H. Y.; Huang, H.Y.; Lin, W. C.; Lin, W.C.; Lee, W. H.; Lee, W.H.; Shu, C. K.; Shu, C.K.; Liao, K. C.; Liao, K.C.; Chen, W. K.; Chen, W.K.; Lee, M. C.; Lee, M.C.; Chen, W. H.; Chen, W.H.; Lee, Y. Y.; Lee, Y.Y. // Applied Physics Letters;10/30/2000, Vol. 77 Issue 18 

    We have studied the As doping effects on the optical characteristics of GaN films by time-integrated photoluminescence and time-resolved photoluminescence. When As is incorporated into the film, the localized defect levels and donor-acceptor pair transition become less resolved. The...

  • Effects of Mg doping on photoelectrical properties of hydrogenated GaN films grown at 380 °C. Yagi, Shigeru; Suzuki, Seiji // Applied Physics Letters;4/9/2001, Vol. 78 Issue 15, p2166 

    The effects of Mg doping on hydrogenated GaN films grown at 380 °C are investigated in terms of the photoelectrical properties of simple sandwich-type cells. The photocurrent increases with Mg until it reaches maximum and the dark current decreases monotonically with Mg doping. The...

  • Electrical properties and stability of p-type ZnO film enhanced by alloying with S and heavy doping of Cu. Pan, H. L.; Yao, B.; Yang, T.; Xu, Y.; Zhang, B. Y.; Liu, W. W.; Shen, D. Z. // Applied Physics Letters;10/4/2010, Vol. 97 Issue 14, p142101 

    Single wurtzite p-type Zn1-yCuyO1-xSx alloy films with 0.081≤x≤0.186 and 0.09≤y≤0.159 were grown on quartz reproducibly by magnetron sputtering. The alloys show very stable p-type conductivity with a hole concentration of 4.31-5.78×1019 cm-3, a resistivity of...

  • Magnetic and electronic properties of thin (Ga,Mn)N films due to an embedded Mn-delta-doping layer. Jeon, H. C.; Lee, S. J.; Kang, T. W.; Chang, K. J.; Yeo, Yung Kee; George, T. F. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p653 

    The magnetization curve as a function of the magnetic field at 5 K showed that the magnetization in the (Ga0.995Mn0.005)N thin film was significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped...

  • Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy. Huang, J.W.; Kuech, T.F. // Applied Physics Letters;4/22/1996, Vol. 68 Issue 17, p2392 

    Applies the frequency-dependent capacitance measurements and admittance spectroscopy of GaN:Mg to study the electronic states associated with Mg doping. Reduction of capacitance at a higher frequency; Existence of one impurity-related acceptor level in the higher Mg-doped sample; Association of...

  • P-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation,.... Rubin, M.; Newman, N.; Chan, J.S.; Fu, T.C.; Ross, J.T. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p64 

    Examines the generation of p-type conduction in ion-beam molecular beam epitaxy gallium nitride thin films by a variety of doping methods. Importance of doping concentration control in the development of wide band gap semiconductors; Determination of carrier concentration and mobility;...

  • Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films. Shet, Sudhakar; Kwang-Soon Ahn; Heli Wang; Nuggehalli, Ravindra; Yanfa Yan; Turner, John; Al-Jassim, Mowafak // Journal of Materials Science;Oct2010, Vol. 45 Issue 19, p5218 

    Ga–N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga–N co-doped ZnO films exhibited enhanced crystallinity...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics