TITLE

Evidence of formation of Si–C bonds during growth of Si-doped III–V semiconductor compounds

AUTHOR(S)
Bettini, J.; de Carvalho, M. M. G
PUB. DATE
April 2005
SOURCE
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this work, we demonstrate that Si–C bonds are formed in III–V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si–C bonds occurs in III–V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations (>1017 cm-3). The main consequence of Si–C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.
ACCESSION #
17185378

 

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