Evidence of formation of Si–C bonds during growth of Si-doped III–V semiconductor compounds

Bettini, J.; de Carvalho, M. M. G
April 2005
Applied Physics Letters;4/11/2005, Vol. 86 Issue 15, p152113
Academic Journal
In this work, we demonstrate that Si–C bonds are formed in III–V semiconductor compounds grown by chemical beam epitaxy. Our results suggest that the formation of Si–C bonds occurs in III–V epitaxial layers with acceptor Carbon residual concentration and high Si concentrations (>1017 cm-3). The main consequence of Si–C bonds is the generation of defects along [111] direction. These defects produce carrier concentration saturation, reduction of electrical mobility, crystal quality degradation, and surface defects.


Related Articles

  • Plasma nitrogen doping of ZnTe, Cd[sub 1-x]Zn[sub x]Te, and CdTe by molecular beam epitaxy. Baron, T.; Tatarenko, S. // Applied Physics Letters;9/5/1994, Vol. 65 Issue 10, p1284 

    Examines the plasma nitrogen doping of molecular beam epitaxy grown zinc telluride, cadmium-telluride and Cd[sub 1-x]Zn[sub x]Te (CZT) layers. Effects of decreasing the zinc (Zn) content of CZT alloys; Information on the doping level obtained for a 12 percent Zn CZT layer; Role of lattice...

  • Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer. Dubon, O. D.; Evans, P. G.; Chervinsky, J. F.; Aziz, M. J.; Spaepen, F.; Golovchenko, J. A.; Chisholm, M. F.; Muller, D. A. // Applied Physics Letters;3/12/2001, Vol. 78 Issue 11, p1505 

    In molecular-beam epitaxy a monolayer of Pb on the Si(111) surface induces single-crystal growth at temperatures well below those required for similar growth on a bare surface. We demonstrate that the suppression of dopant segregation at the lower temperatures attainable by Pb-mediated growth...

  • Low-temperature Si molecular beam epitaxy: Solution to the doping problem. Gossmann, H.-J.; Schubert, E. F.; Eaglesham, D. J.; Cerullo, M. // Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2440 

    A major problem in group IV molecular beam epitaxy (MBE) is the difficulty to incorporate and control dopants due to the low incorporation probability and strong segregation in Si at typical growth temperatures. It is demonstrated here that growth at low temperatures yields a solution to this...

  • Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures. Casel, A.; Jorke, H. // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p989 

    Very abrupt doping structures grown by Si molecular beam epitaxy are investigated by spreading resistance (SR) analysis. The corresponding SR profiles reveal strong carrier spilling effects. To calculate the ‘‘on bevel’’ carrier concentrations of these structures, a...

  • Boron doping in Si molecular beam epitaxy by co-evaporation of B2O3 or doped silicon. Ostrom, R. M.; Allen, F. G. // Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p221 

    We report on controlled boron doping of silicon molecular beam epitaxy (MBE) films by two techniques: sublimation of saturated boron-doped silicon from a boron nitride crucible and evaporation of B2O3 from a tungsten crucible. Both methods were performed with the simultaneous evaporation of...

  • Heterojunction bipolar transistor fabrication using Si1-xGex selective epitaxial growth by gas source silicon molecular beam epitaxy. Hirayama, Hiroyuki; Hiroi, Masayuki; Koyama, Kazuhisa; Tatsumi, Toru // Applied Physics Letters;6/25/1990, Vol. 56 Issue 26, p2645 

    B doping in Si1-xGex was successfully achieved using HBO2 cell in gas source Si molecular beam epitaxy (Si-MBE). Combining this B doping method and selective epitaxial growth of Si1-xGex by gas source Si-MBE, B-doped Si1-xGex selective epitaxial growth was found to be possible. This B-doped...

  • Study of silicon-doped AlxGayIn1-x-yAs quaternary layers by localized cathodoluminescence and electron acoustic microscopy. Papadopoulo, A. C.; Bresse, J. F.; Praseuth, J. P. // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4174 

    Presents a study which investigated the incorporation of silicon in Al[sub0.19]Ga[sub0.28]In[0.53]As quaternary layers grown by molecular-beam epitaxy. Details on the growth procedure of Al[subx]Ga[suby]In[sub1-x-y]As; Experimenta setup for low-temperature filtered cathodoluminescence; Results...

  • Carbon doping of GaAs and (In,Ga)As in solid source molecular beam epitaxy using carbon.... Kai Zhang; Wen-Yen Hwang; Miller, D.L.; Kapitan, Larry W. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2399 

    Investigates the use of carbon tetrabromide in doping gallium arsenide and (indium,gallium)arsenic in a solid source molecular beam epitaxy. Efficiency of dopant incorporation; Characteristics of modulation-doped structures; Advantages of CBr[sub 4] for growth of GaAs and (In,Ga)As devices.

  • Selection of substrate orientation and phosphorus flux to achieve p-type carbon doping of.... Friedman, D.J.; Kibbler, A.E.; Reedy, R. // Applied Physics Letters;8/25/1997, Vol. 71 Issue 8, p1095 

    Examines the p-type doping of Ga[sub 0.5]In[sub 0.5]P grown by solid molecular beam epitaxy. Use of CBr[sub 4] as a carbon source; Dependence of doping on the phosphorus flux and substrate misorientation; Competition between the carbon and phosphorus for sites on the group-V sublattice.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics