Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)

Sivasubramani, P.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Craft, H. S.; Maria, J.-P.
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p201901
Academic Journal
We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.


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