TITLE

Properties of 6H–SiC crystals grown by hydrogen-assisted physical vapor transport

AUTHOR(S)
Li, Q.; Polyakov, A. Y.; Skowronski, M.; Fanton, M. A.; Cavalero, R. C.; Ray, R. G.; Weiland, B. E.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Effects of hydrogen addition to the growth ambient during physical vapor transport (PVT) growth of 6H–SiC were investigated using secondary ion mass spectrometry, deep level transient spectroscopy, and Hall effect measurement. The background nitrogen concentration and the free electron density decrease with increasing hydrogen content. The formation of electron traps (activation energies of 0.4 eV, 0.6 eV, 0.7 eV, 0.9 eV, and 1 eV) was also strongly suppressed. The above results are interpreted as a consequence of hydrocarbon formation produced by the reaction of hydrogen with the SiC source and the graphite parts of the furnace. This leads to more congruent evaporation of SiC and the shift of the gas phase and the SiC deposit stoichiometry due to less Si-rich conditions than in standard PVT growth.
ACCESSION #
17164944

 

Related Articles

  • On Effective Electron Mass of Silicon Field Structures at Low Electron Densities. Dolgopolov, V. T. // JETP Letters;9/25/2002, Vol. 76 Issue 6, p377 

    The trial wave function method developed in [10, 11] for the case of a narrow s band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Land� factor in a two-dimensional electron system of low density. It has been found that the...

  • Thermal ionization of impurity centers in Fe-doped Bi[sub 12]SiO[sub 20] and Bi[sub 12]GeO[sub 20] crystals. Panchenko, T. V. // Physics of the Solid State;Jun99, Vol. 41 Issue 6, p916 

    The spectral and temperature dependence of the optical absorption and thermally stimulated depolarization currents in Fe-doped Bi[sub 12]SiO[sub 20] and Bi[sub 12]GeO[sub 20] crystals are investigated in the photon energy range 1.36-3.46 eV and temperature 85-750 K. The results show thermally...

  • Depth profiling of As at the SiO2/Si interface using secondary ion mass spectrometry. Morgan, Alan E.; Maillot, Philippe // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p959 

    Arsenic profiles across the SiO2/Si interface have been measured with secondary ion mass spectrometry under different O+2 bombardment conditions using As implanted into SiO2 and Si for calibration purposes. Radiation-enhanced segregation causes interfacial pile-up in profiles obtained under...

  • A study of HfO2 film interfaces with Si and SiO2. Lopez, C. M.; Irene, E. A. // Journal of Applied Physics;1/15/2006, Vol. 99 Issue 2, p024101 

    The interfaces studied were formed by the thermal oxidation of sputter-deposited Hf metal onto Si(100)- and SiO2-covered Si(100) wafers and were analyzed in situ and in real time using spectroscopic ellipsometry (SE) in the 1.5–4.5 photon energy range and with mass spectrometry of...

  • Cu gettering in ion implanted and annealed silicon in regions before and beyond the mean projected ion range. Kögler, R.; Peeva, A.; Lebedev, A.; Posselt, M.; Skorupa, W.; Özelt, G.; Hutter, H.; Behar, M. // Journal of Applied Physics;9/15/2003, Vol. 94 Issue 6, p3834 

    Reports on the strong gettering of copper (Cu) atoms in single-crystal silicon implanted with 3.5 MeV P[sup +] ions after thermal treatment and Cu contamination. Detection of three separate Cu gettering layers be secondary ion mass spectrometry; Fitting of Cu profiles with depth distributions...

  • Hydrogen abstraction kinetics and crystallization in low temperature plasma deposition of silicon. Srinivasan, Easwar; Parsons, Gregory N. // Applied Physics Letters;1/26/1998, Vol. 72 Issue 4, p456 

    Exposing a plasma deposited hydrogenated silicon layer to atomic hydrogen results in hydrogen removal from the silicon/hydrogen surface and a net reduction in the total hydrogen content in the layer. For deposition at low temperature, the crystallization fraction corresponds directly with the...

  • High depth resolution Secondary Ion Mass Spectrometry (SIMS) analysis of Si[sub 1-x]Ge[sub x]:C HBT structures. Lu, S.; Kottke, M.; Zollner, S.; Chen, W. // AIP Conference Proceedings;2001, Vol. 550 Issue 1, p672 

    Low energy Secondary Ion Mass Spectrometry (SIMS) was employed to study graded-base Si[sub 1-x]Ge[sub x] : C heterostructure bipolar transistors (HBTs) structural properties. Using an O[sub 2][sup +] beam at 500 eV with normal incident angle, Ge profiles can be quantified by minimizing the...

  • Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing. Sharp, J. A.; Smith, A. J.; Webb, R. P.; Kirkby, K. J.; Cowern, N. E. B.; Giubertoni, D.; Gennaro, S.; Bersani, M.; Foad, M. A.; Fazzini, P. F.; Cristiano, F. // Applied Physics Letters;2/25/2008, Vol. 92 Issue 8, p082109 

    The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion...

  • Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs. Von Neida, A. R.; Pearton, S. J.; Stavola, M.; Caruso, R. // Applied Physics Letters;12/22/1986, Vol. 49 Issue 25, p1708 

    A dramatic dependence on crystal stoichiometry has been observed for the donor activation efficiency of low doses of Si ions implanted into undoped semi-insulating GaAs. Samples from liquid encapsulated Czochralski crystals grown from melts containing As concentrations varying from 47 1/2 to 65...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics