Optical and electrical properties of heavily Mg-doped GaN upon (NH4)2Sx treatment

Yow-Jon Lin; Yow-Lin Chu; Huang, Y. S.; Hsing-Cheng Chang
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202107
Academic Journal
We have employed the photoluminescence (PL) and surface photovoltage spectroscopy (SPS) measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of p-type GaN (p-GaN) in this study. From the PL and SPS measurements, it is suggested that the (MgGa–VN)2+ (MgGa:Ga vacancies occupied by Mg; VN:nitrogen vacancies) complexes near the p-GaN surface region were transformed into the (MgGa-SN)0 (SN:N vacancies occupied by S) complexes after (NH4)2Sx treatment, which resulted in the reduction of the ∼2.8-eV PL intensity and the increase of the hole concentration near the p-GaN surface region.


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