Real structure of the CoSi2/Si(001) interface studied by dedicated aberration-corrected scanning transmission electron microscopy

Falke, Meiken; Falke, Uwe; Bleloch, Andrew; Teichert, Steffen; Beddies, G.; Hinneberg, H.-J.
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203103
Academic Journal
The interface structure of epitaxial cobalt disilicide thin films buried in (001) silicon was studied by dedicated aberration-corrected scanning transmission electron microscopy. Two different CoSi2/Si interface structures, one representing a (2×1) reconstruction containing sevenfold coordinated Co and the other, a (1×1) structure containing eightfold coordinated Co, were unequivocally identified. The reconstructed sevenfold interface structure was observed more frequently than the (1×1) eightfold interface, which confirms first-principles total-energy calculations. Further, the atomic arrangement found in the eightfold interface reveals an atomic displacement, which is due to relaxation and has been predicted theoretically as well. Complex defect structures at interface domain boundaries are described.


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