Instability measurements in amorphous hydrogenated silicon using capacitance-voltage techniques

Paul, S.; Flewitt, A. J.; Milne, W. I.; Robertson, J.
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202110
Academic Journal
In the field of flat panel displays, the current leading technology is the active matrix liquid-crystal display; this uses an amorphous hydrogen silicon (a-Si:H) based thin-film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage method to measure the shift in threshold voltage. We employ metal-insulator-semiconductor structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs.


Related Articles

  • High Performance on a Small Screen.  // Design News;8/18/2003, Vol. 59 Issue 12, p67 

    Focuses thin-film transistor-liquid crystal displays introduced by Sharp Microelectronics. Information on Sharp's proprietary Continuous Grain Silicon technology; Features of the technology.

  • n+-doped-layer-free microcrystalline silicon thin film transistors fabricated with the CuMg as source/drain metal. Wang, M. C.; Chang, T. C.; Liu, Po-Tsun; Xiao, R. W.; Lin, L. F.; Li, Y. Y.; Yeh, F. S.; Chen, J. R. // Applied Physics Letters;7/9/2007, Vol. 91 Issue 2, p022113 

    The feasibility of using CuMg as source/drain metal electrodes for n+-doped-layer-free microcrystalline silicon thin film transistors (μ-Si:H TFTs) has been investigated. The Ohmic-contact characteristic has been achieved by using the CuMg alloy as source/drain metal. Furthermore, a wet...

  • Rocket fuel kicks transistor speeds through the roof. Knight, Will // New Scientist;3/20/2004, Vol. 181 Issue 2439, p25 

    Hydrazine, a toxic liquid sometimes used as a fuel in rocket motors, has turned out to be ideal for helping to make faster thin-film transistors, a crucial component of liquid crystal displays. These transistors are built up from fine layers of semiconductors deposited on a silicon substrate....

  • Automatic defect inspection for LCDs using singular value decomposition. Lu, Chi-Jie; Tsai, Du-Ming // International Journal of Advanced Manufacturing Technology;Jan2005, Vol. 25 Issue 1/2, p53 

    Thin film transistor liquid crystal displays (TFT-LCDs) have become increasingly popular and dominant as display devices. Surface defects on TFT panels not only cause visual failure, but result in electrical failure and loss of LCD operational functionally. In this paper, we propose a global...

  • Present a better image: TFT panels spearhead displays upgrade. Prophet, Graham // EDN Europe;Nov2007, Vol. 52 Issue 11, p24 

    The article discusses the impact of the developments of thin film transistor liquid crystal display (TFT LCD) panels on the marketplace. One of the effects of the rapidly multiplying number of powerful consumer. Products in the marketplace is that it raises expectations. Users demand a...

  • CMV CM-926D. Dawson, Stephen // Australian Personal Computer;Jan2005, Vol. 25 Issue 1, p56 

    This article presents information on the CMV CM-9260 thin film transistor. The specifications for the CMV display claim a lower contrast ratio than the Polyview, and a slightly higher brightness level. Pixel response time is rated at 21ms. This TFT is a competent performer by most standards,...

  • Local resistance measurement on polycrystalline silicon layer in low-temperature poly-Si thin film transistor using scanning spreading resistance microscopy. Abo, S.; Yamagiwa, H.; Tanaka, K.; Wakaya, F.; Sakamoto, T.; Tokioka, H.; Nakagawa, N.; Takai, M. // AIP Conference Proceedings;2006, Vol. 866 Issue 1, p542 

    A local resistance of a low-temperature polycrystalline silicon in a thin film transistor (TFT) for a liquid crystal display was measured using scanning spreading resistance microscopy for investigating an activation of dopant atoms. The observed TFTs had lightly doped drain (LDD) structures...

  • Inverse staggered polycrystalline and amorphous silicon double structure thin film transistors. Aoyama, Takashi; Ogawa, Kazuhiro // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3007 

    Investigates the fabrication of inverse staggered polycrystalline silicon and hydrogenated amorphous silicon double structure thin film transistors. Application to liquid crystal display panels with peripheral driver circuits; Use of plasma chemical vapor deposition technique in irradiating the...

  • The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure. Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Hsieh, Tien-Yu; Chen, Te-Chih; Wu, Chang-Pei; Chou, Cheng-Hsu; Chung, Wang-Cheng; Chang, Jung-Fang; Tai, Ya-Hsiang // Applied Physics Letters;11/26/2012, Vol. 101 Issue 22, p223502 

    This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics