TITLE

Comment on “A growth pathway for highly ordered quantum dot arrays” [Appl. Phys. Lett. 85, 5974 (2004)]

AUTHOR(S)
Kiravittaya, S.; Schmidt, O. G.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p206101
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This article presents information on quantum dot arrays. Researchers have reported on a technique to realize long-range ordered quantum dot (QD) arrays with pronounced size homogeneity. The technique comprises patterning of a GaAs substrate surface with an anodic aluminum oxide membrane and subsequent self-assembled InAs QD growth. The researchers developed this technique because they claimed that an effective means to synthesize three-dimensional confined nanostructures, which possess a high degree of spatial ordering did not exist before.
ACCESSION #
17164901

 

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