NiGe on Ge(001) by reactive deposition epitaxy: An in situ ultrahigh-vacuum transmission-electron microscopy study

Nath, R.; Soo, C. W.; Boothroyd, C. B.; Yeadon, M.; Chi, D. Z.; Sun, H. P.; Chen, Y. B.; Pan, X. Q.; Foo, Y. L.
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p201908
Academic Journal
We use an ultrahigh-vacuum transmission-electron microscopy, equipped with an electron-beam evaporator directed at a heating stage in the pole piece, to follow the reaction pathway of Ni on Ge(001) substrate at 300 °C. Using reactive deposition, we illustrate that epitaxial orthorhombic NiGe (a=5.381 Å, b=3.428 Å, and c=5.811 Å) phase can be grown directly without the initial formation of metal-rich Ni2Ge phase. The epitaxial orientation of the NiGe islands and the underlying Ge(001) substrate were found to be NiGe(101)//Ge(001) and NiGe[010]//Ge[110].


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