TITLE

High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer

AUTHOR(S)
De Angelis, F.; Cipolloni, S.; Mariucci, L.; Fortunato, G.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203505
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors (TFTs), both in bottom contact and top contact configuration. A PMMA buffer layer allows to reduce the interaction between a π-conjugated system of pentacene and the metal or dielectric substrate. We show that a thin PMMA buffer layer improves crystal quality along the metal contacts’ boundaries, while still allowing good ohmic contact. Pentacene TFTs, including a PMMA buffer layer, show very high field-effect mobility, μFE=0.65 and 1.4 cm2/V s, for bottom and top contact configuration, respectively, and remarkable steep subthreshold region.
ACCESSION #
17164874

 

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