Ge–Si system nanoclusters in Si matrix formed by solid-phase epitaxy

Qinghua Xiao; Hailing Tu
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p201914
Academic Journal
Solid-phase epitaxy combined with Ge implantation has been employed to prepare Ge–Si system nanoclusters. The nanoclusters coherently embedded in the single-crystalline Si matrix are, on average, controlled within the size range of a few nanometers. The distribution and the number of these nanoclusters are closely correlated with the implant energy and dose as well as the surface oxidation. Within the nanoclusters, the lattice is modulated with a period of four times of the (111) plane spacing in the regular Si lattice. It is argued that the lattice modulated characteristics should result from Ge ordering instead of moiré interference.


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