Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

Hall, K. C.; Gündoğdu, K.; Hicks, J. L.; Kocbay, A. N.; Flatté, M. E.; Boggess, T. F.; Holabird, K.; Hunter, A.; Chow, D. H.; Zinck, J. J.
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202114
Academic Journal
We report the demonstration of room temperature gate control over the electron spin dynamics using the Rashba effect in a (110) InAs/AlSb two-dimensional electron gas. Our calculations predict that the strong spin–orbit interaction in this system produces pseudomagnetic fields exceeding 1 T when only 140 mV is applied across a single quantum well. Using this large pseudomagnetic field, we demonstrate low-power spin manipulation on a picosecond time scale. Our findings are promising for the prospect of nonmagnetic low-power, high-speed spintronics.


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