TITLE

Monte Carlo simulation of double gate silicon on insulator devices operated as velocity modulation transistors

AUTHOR(S)
Sampedro, C.; Gamiz, F.; Godoy, A.; Prunnila, M.; Ahopelto, J.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p202115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We used an ensemble Monte Carlo simulator to study both the dc and transient behavior of a double gate silicon-on-insulator transistor (DGSOI) operated as a velocity modulation transistor (VMT) and as a conventional field effect transistor (FET). Operated as a VMT, the DGSOI transistor provides switching times shorter than 1 ps regardless of the channel length, with a significant current modulation factor at room temperature. The same device operated as a FET provides much longer switching times which, in addition, increase with the channel length.
ACCESSION #
17164861

 

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