TITLE

Dynamic amplitude-phase coupling in quantum-dot lasers

AUTHOR(S)
Gehrig, E.; Hess, O.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The well-known α-factor is a convenient measure to describe the magnitude of the amplitude-phase coupling of semiconductor lasers. But is the α-factor really a parameter? First-principle simulations of InGaAs quantum-dot lasers and amplifiers show that in spatially extended quantum-dot laser structures, the amplitude phase coupling is far from being a constant. Our computation of the α-factor demonstrates the same large and excitation-dependent variation and scatter as corresponding to experimentally determined values. Our results therefore provide a key to the interpretation and give a measure of applicability of the α-factor for the classification of quantum-dot lasers.
ACCESSION #
17164855

 

Related Articles

  • Simulation of characteristics of broadband quantum dot lasers. Tan, C. L.; Wang, Y.; Djie, H. S.; Ooi, B. S. // Optical & Quantum Electronics;Apr2008, Vol. 40 Issue 5/6, p391 

    Authors theoretically present the characterization of the multiple states broadband InGaAs/GaAs quantum-dot lasers that agrees well with the measured data. Based on the derived model, this new class of semiconductor laser is further characterized theoretically to gain an idea of the derivative...

  • A Novel Multi-Service Passive Optical Network Based On The Wavelength-Division-Multiplexed Technology. Ping Li; Zhenping Lan; Yuru Wang; Huanlin Lv; Nianyu Zou // Applied Mechanics & Materials;2014, Issue 538, p490 

    The simulation diagram of WDM-PON is proposed, utilizing DFB laser diodes as light sources, array waveguide grating as multiplexer for signals' split and amplifiers as gain generator, respectively, to realize networking for both sending and receiving units. WDM-PON system with 128 branches...

  • Abnormal temperature dependent photoluminescence of excited states of InAs/GaAs quantum dots: Carrier exchange between excited states and ground states. Zhou, X. L.; Chen, Y. H.; Ye, X. L.; Bo Xu; Wang, Z. G. // Journal of Applied Physics;Jun2011, Vol. 109 Issue 11, p113540 

    This paper presents detailed studies on the temperature dependent photoluminescence (PL) of excited states (ES) of self-assembled InAs/GaAs quantum dots. Two abnormal temperature dependent characteristics of ES have been observed: first is the strong broadening of PL linewidth with increasing...

  • On the nature of quantum dash structures. Dery, H.; Benisty, E.; Epstein, A.; Alizon, R.; Mikhelashvili, V.; Eisenstein, G.; Schwertberger, R.; Gold, D.; Reithmaier, J. P.; Forchel, A. // Journal of Applied Physics;6/1/2004, Vol. 95 Issue 11, p6103 

    We describe a theoretical model for the linear optical gain properties of a quantum wire assembly and compare it to the well known case of a quantum dot assembly. We also present a technique to analyze the gain of an optical amplifier using bias dependent room temperature amplified spontaneous...

  • Frequency domain approach for time-resolved pump-probe microscopy using intensity modulated laser diodes. Miyazaki, J.; Kawasumi, K.; Kobayashi, T. // Review of Scientific Instruments;2014, Vol. 85 Issue 9, p1 

    We present a scheme for time-resolved pump-probe microscopy using intensity modulated laser diodes. The modulation frequencies of the pump and probe beams are varied up to 500 MHz with fixed frequency detuning typically set at 15 kHz. The frequency response of the pump-probe signal is detected...

  • Simulation of Mutual Coupling of Photonic Crystal Cavity Modes and Semiconductor Quantum Dots. Declair, S.; Song, X.; Meier, T.; Förstner, J. // AIP Conference Proceedings;10/5/2011, Vol. 1398 Issue 1, p123 

    We present numerical results of the mutual coupling between photonic crystal cavities and semiconductor quantum dots. Normal mode splitting between a single cavity mode and a single quantum dot is shown under weak excitation, while under strong excitation Q-factor dependent side bands appear,...

  • Photocurrent in self-organized InAs quantum dots in 1.3 �m InAs/InGaAs/GaAs semiconductor laser heterostructures. Savel�ev, A.V.; Maksimov, M.V.; Ustinov, V.M.; Seisyan, R.P. // Semiconductors;Jan2006, Vol. 40 Issue 1, p84 

    The photocurrent spectra of InAs/InGaAs/GaAs laser heterostructures with self-organized InAs quantum dots (QDs) are studied. The study has been performed with a sample illuminated perpendicularly or in parallel to the QD plane. The optical density of QDs, maximum gain in the laser structure,...

  • High-Power 1.5 μm InAs—InGaAs Quantum Dot Lasers on GaAs Substrates. Maksimov, M.V.; Shernyakov, Yu.M.; Kryzhanovskaya, N.V.; Gladyshev, A.G.; Musikhin, Yu.G.; Ledentsov, N.N.; Zhukov, A.E.; Vasil'ev, A.P.; Kovsh, A.R.; Mikhrin, S.S.; Semenova, E.S.; Maleev, N.A.; Nikitina, E.V.; Ustinov, V.M.; Alferov, Zh.I. // Semiconductors;Jun2004, Vol. 38 Issue 6, p732 

    Light–current, spectral, and temperature characteristics of long-wavelength (1.46–1.5 μm) lasers grown on GaAs substrates, with an active area based on InAs–InGaAs quantum dots, are studied. To reach the required lasing wavelength, quantum dots were grown on top of a...

  • Low threshold current density distributed feedback quantum cascade lasers with deep top gratings. Gangyi Xu; Aizhen Li; Yaoyao Li; Lin Wei; Yonggang Zhang; Chun Lin; Hua Li // Applied Physics Letters;10/16/2006, Vol. 89 Issue 16, p161102 

    The authors report on pulsed and continuous-wave operation of single mode tunable distributed feedback quantum cascade lasers at λ∼7.7 μm. A deep top grating and a thin heavily doped InP layer beneath the grating are formed in the upper cladding to obtain simultaneously a strong...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics