TITLE

Highly unidirectional InAs/InGaAs/GaAs quantum-dot ring lasers

AUTHOR(S)
Hongjun Cao; Hui Deng; Hai Ling; Chiyu Liu; Smagley, Vladimir A.; Caldwell, Robert B.; Smolyakov, Gennady A.; Gray, Allen L.; Lester, Luke F.; Eliseev, Petr G.; Osinski, Marek
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203117
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report fabrication and characterization of semiconductor ring lasers with quantum-dot active region. The InAs/InGaAs/GaAs “dots-in-a-well” ridge-waveguide ring lasers are monolithically integrated with coupling waveguides and monitoring quantum-dot photodetectors. The lowest threshold current density for semiconductor ring lasers is demonstrated. When enhanced by a forward biased S-section waveguide, stable unidirectional operation with record suppression ratio of counterpropagating waves exceeding 30 dB is achieved.
ACCESSION #
17164854

 

Related Articles

  • Electrons in artificial atoms. Gammon, Daniel // Nature;6/22/2000, Vol. 405 Issue 6789, p899 

    Focuses on semiconductor quantum dots. Optical studies of individual quantum dots; Interest in semiconductor quantum dots that interact strongly with light; Details of quantum confinement of electrons; Harnessing quantum mechanical properties.

  • Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates. Shkolnik, A. S.; Karachinsky, L. Ya.; Gordeev, N. Yu.; Zegrya, G. G.; Evtikhiev, V. P.; Pellegrini, S.; Buller, G. S. // Applied Physics Letters;5/23/2005, Vol. 86 Issue 21, p211112 

    Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77–300 K on samples with varying sized self-assembled InAs/GaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second...

  • Fractal Study of Coupling Transitions in Ballistic Quantum-Dot Arrays. Martin, T. P.; Taylor, R. P.; Linke, H.; Murray, B.; Arndt, C.; Aoki, N.; Oonishi, D.; Iwase, Y.; Ochiai, Y. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p823 

    A fractal analysis is used to characterize magnetoconductance fluctuations in an open, coupled quantum-dot array. The fractal dimension is combined with the empirical parameter Q as a probe of the energy level spectrum in the array, and a coupling transition is identified as a function of the...

  • Predicting and Understanding Order of Heteroepitaxial Quantum Dots. Friedman, Lawrence H. // Journal of Electronic Materials;Dec2007, Vol. 36 Issue 12, p1546 

    Heteroepitaxial self-assembled quantumdots (SAQDs) will allow breakthroughs in electronics and optoelectronics. SAQDs are a result of Stranski-Krastanow growth, whereby a growing planar film becomes unstable after an initial wetting layer is formed. Common systems are GexSi1-x=Si and...

  • Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature. Bhattacharya, P.; Su, X. H.; Chakrabarti, S.; Ariyawansa, G.; Perera, A. G. U. // Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191106 

    We report high-temperature (240–300 K) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with photoresponse peaks at ∼6 μm and 17 μm. The extremely low dark current density of 1.55 A/cm2 at 300 K for 1 V bias is made...

  • The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System. Musikhin, Yu. G.; Cirlin, G. E.; Dubrovskii, V. G.; Samsonenko, Yu. B.; Tonkikh, A. A.; Bert, N. A.; Ustinov, V. M. // Semiconductors;Jul2005, Vol. 39 Issue 7, p820 

    The results of experimental and theoretical studies of quantum dot formation in an InAs/GaAs(100) system in the case of a subcritical width of the deposited InAs layer (1.5�1.6 monolayers) are presented. It is shown that, in the subcritical range of InAs thicknesses (smaller than 1.6...

  • Fluorophosphate glasses doped with PbSe quantum dots and their nonlinear optical characteristics. V. Melekhin; E. Kolobkova; A. Lipovskii; V. Petrikov; A. Malyarevich; V. Savitsky // Glass Physics & Chemistry;Aug2008, Vol. 34 Issue 4, p351 

    Abstract  A new fluorophosphate glass matrix containing PbSe quantum dots characterized by a narrow size distribution (ΔR/R ∼ 5–7%, where R is the size of a quantum dot) is prepared under heat treatment. It is demonstrated that fluorophosphate glasses can be doped by...

  • Calculation of the size-distribution function for quantum dots at the kinetic stage of growth. Dubrovskiĭ, V. // Semiconductors;Oct2006, Vol. 40 Issue 10, p1123 

    A theoretical model for calculating the distribution of quantum dots in size in the case of growth according to the Stranski-Krastanow mechanism in the lattice-mismatched heteroepitaxial systems is suggested. The model is based on the general theory of the islands’ nucleation at the...

  • Strain-controlled correlation effects in self-assembled quantum dot stacks. Kunert, R.; Schöll, E. // Applied Physics Letters;10/9/2006, Vol. 89 Issue 15, p153103 

    The authors show that elastic interactions of an array of self-assembled quantum dots in a parent material matrix are markedly distinct from the elastic field created by a single point defect and can explain the observed abrupt correlation-anticorrelation transition in semiconductor quantum dot...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics