Over 1.3 μm continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates

Yamamoto, Naokatsu; Akahane, Kouichi; Gozu, Shinichirou; Ohtani, Naoki
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203118
Academic Journal
A silicon atom irradiation technique is proposed to create high-density InGaSb quantum dots (QDs) on a GaAs substrate. This technique irradiates Si atoms immediately before InGaSb QD growth, and the density of QDs with Si atoms is about 100 times higher than that without Si atoms. The high-density InGaSb QDs show long-wavelength photo- and electroluminescence emissions around 1.3 and 1.5 μm in the optical communications waveband. An Sb-based QD laser diode (LD) containing an InGaSb QD active layer was fabricated on a GaAs substrate. This Sb-based QD-LD shows a 1.37 μm continuous-wave laser emission at room temperature.


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