Mechanism of nanoblister formation in Ga+ self-ion implanted GaN nanowires

Dhara, S.; Datta, A.; Wu, C. T.; Chen, K. H.; Wang, Y. L.; Muto, S.; Tanabe, T.; Shen, C. H.; Hsu, C. W.; Chen, L. C.; Maruyama, T.
May 2005
Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203119
Academic Journal
The formation of voids and bubbles during ion implantation is an important area of material research. Void and bubble formation can result in swelling and embrittlement of metallic or semiconducting materials, and increase catalytic effects in the nanopores of the bubble. Here, we report the observation of metallic nanoblister formation in GaN nanowires under self-ion implantation using a Ga+ focused ion beam. The mechanism of the blister formation was resolved using high-resolution transmission electron microscopy equipped with electron energy loss spectroscopy and plasmon imaging.


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