Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

Cabié, M.; Ponchet, A.; Rocher, A.; Durand, L.; Altibelli, A.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191901
Academic Journal
The epitaxial stress of a Ga0.8In0.2As thin layer deposited on a GaAs substrate has been measured by the curvature method adapted to transmission electron microscopy. It is shown that even if the geometrical characteristics of the specimens thinned to be observed by transmission electron microscopy are very different from the ones of a thick sample, the conditions of validity of the model can still be verified. Finite element calculations have been performed to determine the geometry of the specimen answering to these conditions. Once these conditions are satisfied, the stress measured on a Ga0.8In0.2As layer is -1.30±0.13 GPa.


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