Blue-purplish InGaN quantum wells with shallow depth of exciton localization

Akasaka, Tetsuya; Gotoh, Hideki; Nakano, Hedetoshi; Makimoto, Toshiki
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191902
Academic Journal
Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.


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