TITLE

Role of phonon scattering in carbon nanotube field-effect transistors

AUTHOR(S)
Guo, Jing; Lundstrom, Mark
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p193103
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The role of phonon scattering in carbon nanotube field-effect transistors (CNTFETs) is explored by solving the Boltzmann transport equation using the Monte Carlo method. The results show that elastic scattering in a short-channel CNTFET has a small effect on the source-drain current due to the long elastic mean-free path (mfp) (∼1 μm). If elastic scattering with a short mfp were to exist in a CNTFET, the on current would be severely degraded due to the one-dimensional channel geometry. At high drain bias, optical phonon scattering, which has a much shorter mfp (∼10 nm), is expected to dominate, even in a short-channel CNTFET. We find, however, that inelastic optical scattering has a small effect in CNTFETs under modest gate bias.
ACCESSION #
17164831

 

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