Band structure and alignment of the AlN/SiC heterostructure

Choi, Jongwoo; Puthenkovilakam, Ragesh; Chang, Jane P.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192101
Academic Journal
Valence-band structures and band alignments at the AlN/SiC interface are studied by x-ray photoelectron spectroscopy (XPS) combined with first-principle calculations. Theoretical valence-band structures of SiC and AlN, and band offsets at their interface, were obtained by plane-wave pseudopotential method within the framework of density functional theory. The conduction- and valence-band offsets determined by XPS are 1.3 and 1.7 eV, respectively, in excellent agreement with the theoretical values. These relatively large band offsets indicate that AlN is suitable as a gate dielectric or a lattice-matched interfacial layer on SiC.


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