TITLE

Effects of nonequally biaxial misfit strains on the phase diagram and dielectric properties of epitaxial ferroelectric thin films

AUTHOR(S)
Jie Wang; Tong-Yi Zhang
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of nonequally biaxial in-plane misfit strains on the equilibrium polarization states and the dielectric properties of single-domain epitaxial ferroelectric thin films are investigated by a nonlinear thermodynamic theory. The “misfit strain-misfit strain” and “temperature-misfit strain” phase diagrams for single-domain BaTiO3 (BT) and PbTiO3 (PT) thin films grown on tetragonal substrates are developed by minimizing the Helmholtz free energy. The nonequally biaxial misfit strains cause the presence of two in-plane tetragonal ferreoelectric phases, a1 (P1≠0,P2=P3=0) and a2 (P2≠0,P1=P3=0), in both BT and PT thin films, which do not exist if the misfit strains are equally biaxial.
ACCESSION #
17164821

 

Related Articles

  • Simulation of interface dislocations effect on polarization distribution of ferroelectric thin films. Yue Zheng; Biao Wang; Woo, C. H. // Applied Physics Letters;2/27/2006, Vol. 88 Issue 9, p092903 

    Effects of interfacial dislocations on the properties of ferroelectric thin films are investigated, using the dynamic Ginzburg–Landau equation. Our results confirm the existence of a dead layer near the film/substrate interface. Due to the combined effects of the dislocations and the...

  • Epitaxial/amorphous Ba0.3Sr0.7TiO3 film composite structure for tunable applications. Yamada, Tomoaki; Sherman, Vladimir O.; Nöth, Andreas; Muralt, Paul; Tagantsev, Alexander K.; Setter, Nava // Applied Physics Letters;7/17/2006, Vol. 89 Issue 3, p032905 

    A Ba0.3Sr0.7TiO3 (BST) thin film composite structure was fabricated by means of a selective epitaxial growth process. The epitaxial growth of BST on SrRuO3 electrode surface was selectively achieved at 485 °C using a prepatterned ultrathin amorphous BST layer that locally prevented...

  • Temperature-dependent fatigue behaviors of ferroelectric Pb(Zr0.52Ti0.48)O3 and Pb0.75La0.25TiO3 thin films. Liu, J.-M.; Wang, Y.; Zhu, C.; Yuan, G. L.; Zhang, S. T. // Applied Physics Letters;7/25/2005, Vol. 87 Issue 4, p042904 

    The polarization switching fatigue of ABO3-perovskite ferroelectric thin-film Pb(Zr0.52Ti0.48)O3 (PZT) prepared by metalorganic decomposition (MOD) and Pb0.75La0.25TiO3 (PLT) prepared by pulsed laser deposition (PLD), are investigated. The temperature as a degree of freedom is employed to...

  • Temperature dependence of polarization switching properties of Bi3.15Nd0.85Ti3O12 ferroelectric thin film. Zhang, Y.; Zhong, X. L.; Chen, Z. H.; Wang, J. B.; Zhou, Y. C. // Journal of Applied Physics;Jul2011, Vol. 110 Issue 1, p014102 

    The temperature dependences of the polarization switching properties of Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film in the range from 25 to 150°C have been investigated. With increasing temperature, the switchable polarization and switching time decrease. Meanwhile, the depolarization...

  • Effects of polarization and permittivity gradients and other parameters on the anomalous vertical shift behavior of graded ferroelectric thin films. Zhou, Y.; Chan, H. K.; Lam, C. H.; Shin, F. G. // Journal of Applied Physics;8/1/2005, Vol. 98 Issue 3, p034105 

    We studied theoretically the dependence of the “polarization offset” on various parameters in compositionally graded ferroelectric thin films. Our model adopts the Landau-Khalatnikov equation to describe hysteresis behavior and takes the time-dependent space-charge-limited...

  • Epitaxial growth of (103)-oriented ferroelectric SrBi[sub 2]Ta[sub 2]O[sub 9] thin films on Si(100). Lee, Ho Nyung; Senz, Stephan; Pignolet, Alain; Hesse, Dietrich // Applied Physics Letters;5/7/2001, Vol. 78 Issue 19, p2922 

    Non-c-axis-oriented ferroelectric SrBi[sub 2]Ta[sub 2]O[sub 9] (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the...

  • Effects of strain gradient on charge offsets and pyroelectric properties of ferroelectric thin films. Yue Zheng; Biao Wang; Woo, C. H.a // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p062904 

    The Landau-Ginzburg-Devonshire theory is used to study the effects of the strain gradient due to the epitaxial stresses in ferroelectric thin films sandwiched between two different substrates. The polarization in the film is found to be nonuniform, resulting in charge offsets and an asymmetric...

  • Dielectric Response of Ba[sub 0.75]Sr[sub 0.25]TiO[sub 3] Epitaxial Films to Electric Field and Temperature. Boıkov, Yu. A.; Erts, D.; Claeson, T.; Boıkov, A. Yu. // Physics of the Solid State;Nov2002, Vol. 44 Issue 11, p2157 

    The structure and dielectric parameters of the intermediate ferroelectric layer in the (001)SrRuO[SUB3] ∥ (100)Ba[SUB0.75] Sr[SUB0.25]TiO[SUB3] ∥ (001)SrRO[SUB3] heterostructure grown by laser ablation on (001)La[SUB0.294]Sr[SUB0.706]Al[SUB0.647]Ta[SUB0.353]0[SUB3] were studied. Tensile...

  • Ferroelectric thin films. Zhang, Jialan // American Ceramic Society Bulletin;Jun/Jul2010, Vol. 89 Issue 5, p33 

    The article presents the study on the physical properties of ferroelectric thin films. Particular focus is given to the coupling of the internal stresses to the polarization which creates an impact on dielectric, piezoelectric, pyroelectric response of the film. Photographs of newly developed...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics