TITLE

Study of orientation effect on nanoscale polarization in BaTiO3 thin films using piezoresponse force microscopy

AUTHOR(S)
Il-Doo Kim; Avrahami, Ytshak; Tuller, Harry L.; Young-Bae Park; Dicken, Matthew J.; Atwater, Harry A.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have investigated the effect of texture on in-plane (IPP) and out-of plane (OPP) polarizations of pulsed-laser-deposited BaTiO3 thin films grown on Pt and La0.5Sr0.5CoO3 (LSCO) buffered Pt electrodes. The OPP and IPP polarizations were observed by piezoresponse force microscopy (PFM) for three-dimensional polarization analyses in conjunction with conventional diffraction methods using x-ray diffraction and reflection high energy electron diffraction measurements. BaTiO3 films grown on Pt electrodes exhibited highly (101) preferred orientation with higher IPP component whereas BaTiO3 film grown on LSCO/Pt electrodes showed (001) and (101) orientations with higher OPP component. Measured effective d33 values of BaTiO3 films deposited on Pt and LSCO/Pt electrodes were 14.3 and 54.0 pm/V, respectively. Local piezoelectric strain loops obtained by OPP and IPP-PFM showed that piezoelectric properties were strongly related to film orientation.
ACCESSION #
17164813

 

Related Articles

  • Characterization of (100)-oriented BiScO3–PbTiO3 thin films synthesized by a modified sol-gel method. Hai Wen; Xiaohui Wang; Xiangyun Deng; Longtu Li // Applied Physics Letters;5/29/2006, Vol. 88 Issue 22, p222904 

    The ferroelectric and piezoelectric properties of (100)-oriented BiScO3–PbTiO3 (BSPT) thin films were investigated. (100)-oriented 0.34BiScO3–0.66PbTiO3 thin films were synthesized on Pt(111)/Ti/SiO2/Si(111) substrates using a modified sol-gel method. Saturated polarization...

  • Piezoelectric coefficients of multilayer Pb(Zr,Ti)O3 thin films. S. Muensit; P. Sukwisut; P. Khaenamkeaw; Lang, S. B. // Applied Physics A: Materials Science & Processing;Aug2008, Vol. 92 Issue 3, p659 

    Sol–gel techniques were used to prepare thin films of Pb(Zr x ,Ti1− x )O3 (PZT) with three different Zr/Ti ratios and a graded PZT film with three different compositional layers. A Michelson interferometer was used to measure the thickness strains due to an applied ac electric...

  • A study on the carrier injection mechanism of the bottom-contact pentacene thin film transistor. Keum-Dong Jung; Yoo Chul Kim; Hyungcheol Shin; Byung-Gook Park; Jong Duk Lee; Eou Sik Cho; Sang Jik Kwon // Applied Physics Letters;3/8/2010, Vol. 96 Issue 10, p103305 

    For an analysis of the mechanism of carrier injection in the structure of bottom contact organic thin-film transistor (OTFT), Al blocking layer was applied to the source/drain electrode in variety of ways in the fabrication of bottom contact OTFT. From the comparison of the transfer...

  • Infrared transparent carbon nanotube thin films. Liangbing Hu; Hecht, David S.; Grüner, George // Applied Physics Letters;2/23/2009, Vol. 94 Issue 8, p081103 

    We have measured the infrared properties of optically transparent and electrically conductive single walled carbon nanotube thin films. We found that nanotube films with sheet resistance values of 200 ࡎ/sq show outstanding transmittance in the infrared range up to at least 22 μm, with an...

  • Transparent organic thin film transistors with WO3/Ag/WO3 source-drain electrodes fabricated by thermal evaporation. Zhang, Nan; Hu, Yongsheng; Liu, Xingyuan // Applied Physics Letters;7/15/2013, Vol. 103 Issue 3, p033301 

    High-performance transparent organic thin film transistors using a WO3/Ag/WO3 (WAW) multilayer as the source and drain electrodes have been developed without breaking the vacuum. The WAW electrodes were deposited by thermal evaporation at room temperature, leading to little damage to organic...

  • Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions. Nauenheim, C.; Kuegeler, C.; Ruediger, A.; Waser, R. // Applied Physics Letters;3/22/2010, Vol. 96 Issue 12, p122902 

    We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively sputtered TiO2 thin film between Pt and Ti/Pt electrodes, respectively. As most resistance switching materials, TiO2 needs to be electroformed before it can be switched. This paper presents and...

  • Resistance-switching properties of La0.67Ca0.33MnO3 thin films with Ag—Al alloy top electrodes. Yang, R.; Li, X. M.; Yu, W. D.; Liu, X. J.; Gao, X. D.; Wang, Q.; Chen, L. D. // Applied Physics A: Materials Science & Processing;Oct2009, Vol. 97 Issue 1, p85 

    A novel Ag–Al alloy electrode has been prepared on the La0.67Ca0.33MnO3 (LCMO) film grown by pulsed laser deposition, with the aim to improve its resistance-switching properties. Nonlinear, asymmetric, and hysteretic current–voltage characteristics and reversible polarity-dependent...

  • Low-voltage indium gallium zinc oxide thin film transistors on paper substrates. Wantae Lim; Douglas, E. A.; Norton, D. P.; Pearton, S. J.; Ren, F.; Young-Woo Heo; Son, S. Y.; Yuh, J. H. // Applied Physics Letters;2/1/2010, Vol. 96 Issue 5, p053510 

    We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO4) thin film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤100 °C). As a water and solvent barrier layer, cyclotene (BCB 3022–35 from Dow Chemical) was...

  • Investigation on switching kinetics in epitaxial Pb(Zr0.2Ti0.8)O3 ferroelectric thin films: Role of the 90° domain walls. Wei Li; Alexe, Marin // Applied Physics Letters;12/24/2007, Vol. 91 Issue 26, p262903 

    Ferroelectric switching behavior of single-crystal-like epitaxial Pb(Zr0.2Ti0.8)O3 thin films with different densities of 90° domain walls was investigated under various applied fields. It was found that the saturated switchable polarization of about 170 μC/cm2 did not vary with applied...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics