TITLE

Reduction of dislocations in GaN epilayers using templated three-dimensional coherent nanoislands

AUTHOR(S)
Jeganathan, K.; Shimizu, M.; Okumura, H.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191908
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-dislocation-density GaN layers have been grown on 6H–SiC(0001) substrates by molecular-beam epitaxy using high-density (∼4×1011 cm-2) self-assembled Stranski–Krastanov GaN nanoislands buffer. The density of dislocations determined from hot-wet chemical etching and atomic force microscopy show that the insertion of coherent nanoislands as a buffer reduces the defect migration from the interface to the GaN epitaxial layers. The dislocation density is dramatically dropped to ∼107 cm-2 in GaN layers grown on coherent nanoislands as compared to ∼109 cm-2 in the typical GaN layers grown on the AIN buffer.
ACCESSION #
17164808

 

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