Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping

Kiju Im; Sungkweon Baek; Hyunsang Hwang; Chang-Geun Ahn; Jong-Heon Yang; In-Bok Baek; Seongjae Lee; Won-Ju Cho
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p193503
Academic Journal
A low-temperature activation annealing process following plasma doping (PLAD) was investigated. A dramatic reduction of sheet resistance Rs occurred in the postactivation annealing temperature range of 400 °C–480 °C after PLAD. The Rs of 30 Ω/sq. and the junction depth Xj of 30 nm was obtained without the additional diffusion of a dopant from the postactivation annealing in the fabricated junction. The electrical characteristics of a n+-p junction diode fabricated by PLAD were also improved after low-temperature postannealing.


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