Observation of ultrahigh quality factor in a semiconductor microcavity

Sanvitto, D.; Daraei, A.; Tahraoui, A.; Hopkinson, M.; Fry, P. W.; Whittaker, D. M.; Skolnick, M. S.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191109
Academic Journal
Observation of a very high-quality factor (Q) of ∼30,000 is reported for a planar semiconductor microcavity grown by molecular-beam epitaxy using in situ optical monitoring. The very high Qs are measured in pillars of 5–10 μm diameter, and are approximately a factor of 3 higher than measured in planar structures before etching. The higher values in the pillars are ascribed to the elimination of the effects of in-plane dispersion, diffraction, and lateral inhomogeneities, thus allowing the intrinsic Q of the planar structure to be observed. Spectrally resolved mode mapping is reported, accounting qualitatively for the decrease of Q with increasing mode number in the pillars.


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