Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures

Fischer, F.; Schuh, D.; Bichler, M.; Abstreiter, G.; Grayson, M.; Neumaier, K.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192106
Academic Journal
We implement metallic layers of Si-doped (110) GaAs as modulation doping in high mobility p-type heterostructures, changing to p-growth conditions for the doping layer alone. The strongly autocompensated doping is characterized in bulk samples first, identifying the metal-insulator transition density and confirming classic hopping conduction in the insulating regime. To overcome the poor morphology inherent to Si p-type (110) growth, heterostructures are then fabricated with only the modulation-doping layer grown under p-type conditions. Such heterostructures show a hole mobility of μ=1.75×105 cm2/V s at density p=2.4×1011 cm-2. We identify the zero-field spin-splitting characteristic of p-type heterostructures, but observe a remarkably isotropic mobility and a persistent photoconductivity unusual for p heterojunctions grown on other facets. This modulated growth technique is particularly relevant for p-type cleaved-edge overgrowth and for III-V growth chambers, where Si is the only dopant.


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