# Spin-polarized transport of two-dimensional electron gas embedded in a diluted magnetic semiconductor

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- Resonant spin polarization and Hall effects in a two-dimensional electron gas. Zhang, Degang; Yao-Ming Mu; Ting, C. S. // Applied Physics Letters;5/26/2008, Vol. 92 Issue 21, p212103
We have studied transport properties in a two-dimensional electron gas with equal Rashba and Dresselhaus spin-orbit interactions under a perpendicular magnetic field. By employing the exact solution for this system, we found resonant charge and spin Hall conductances at a certain magnetic field,...

- Investigation of Heusler alloy-semiconductor interfaces. Eremeev, S. V.; Kul'kov, S. S.; Kul'kova, S. E. // Physics of the Solid State;Feb2008, Vol. 50 Issue 2, p259
Using the electron density functional theory, the electronic structure and magnetic properties of possible contacts on the (001) interface between XYZ and X 2 YZ Heusler alloys (NiMnSb, Co2 MnSi) and IIIï¿½V semiconductors (InP, GaAs) are studied. It is demonstrated that, in both cases, the...

- High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures. Gonschorek, M.; Carlin, J.-F.; Feltin, E.; Py, M. A.; Grandjean, N. // Applied Physics Letters;8/7/2006, Vol. 89 Issue 6, p062106
Room temperature electron mobility of 1170 cm2/V s is obtained in an undoped, lattice-matched, Al0.82In0.18N/GaN field-effect transistor heterostructure, while keeping a high (2.6Â±0.3)Ã—1013 cm-2 electron gas density intrinsic to the Al0.82In0.18N/GaN material system. This results in a...

- Spin-imbalance in a one-dimensional Fermi gas. Liao, Yean-an; Rittner, Ann Sophie C.; Paprotta, Tobias; Li, Wenhui; Partridge, Guthrie B.; Hulet, Randall G.; Baur, Stefan K.; Mueller, Erich J. // Nature;9/30/2010, Vol. 467 Issue 7315, p567
Superconductivity and magnetism generally do not coexist. Changing the relative number of up and down spin electrons disrupts the basic mechanism of superconductivity, where atoms of opposite momentum and spin form Cooper pairs. Nearly forty years ago Fulde and Ferrell and Larkin and Ovchinnikov...

- Resistively Detected Nuclear Spin Polarization in Single Narrow-Gap Quantum Wells. Liu, H. W.; Yang, K. F.; Mishima, T. D.; Santos, M. B.; Hirayama, Y. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p625
We demonstrate resistively detected nuclear magnetic resonance (RDNMR) in a two-dimensional electron gas (2DEG) formed in single InSb quantum wells. The large g factors of the InSb 2DEG enable construction of the simplest pseudospin quantum Hall ferromagnet (PQHF) characterized by a resistance...

- Density of states of a two-dimensional electron gas including nonparabolicity. López-Villanueva, J. A.; Gámiz, F.; Melchor, I.; Jiménez-Tejada, J. A. // Journal of Applied Physics;4/15/1994, Vol. 75 Issue 8, p4267
Focuses on a study which proposed an expression for the density of states per unit area and unit of total energy in a two-dimensional electron gas. Information on the electron energy upon which the density of states depends; Mathematical model for including nonparabolicity in a dispersion...

- Electron density and Slater sum of a semi-infinite electron gas in d dimensions. March, N. H. // Journal of Mathematical Physics;Dec87, Vol. 28 Issue 12, p2975
By taking the electron densities of semi-infinite electron gases in one and in three dimensions, and forming the Slater sum by the Laplace transform, it is shown that the Slater sum is the classical partition function in d dimensions, times a function independent of dimensionality. The electron...

- Low-density high-mobility electron gas in wide parabolic GaAs/AlxGa1-xAs wells. Hopkins, P. F.; Rimberg, A. J.; Gwinn, E. G.; Westervelt, R. M.; Sundaram, M.; Gossard, A. C. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2823
Remotely doped wide parabolic GaAs/AlxGa1-xAs wells are used to create thick (>= 1000 Ã…) layers of high-mobility (>= 2Ã—105 cm2/V s) electron gas with three-dimensional densities below (by a factor âˆ¼3) the metal-insulator transition for doped GaAs. The temperature dependences of the...

- Two-Dimensional Electron Gas in Semimagnetic Semiconductor HgMnTe with Inverted Bands. Bogevolnov, V. B.; Ivankiv, I. M.; Yafyasov, A. M.; Radantsev, V. F. // Journal of Experimental & Theoretical Physics;Jan2001, Vol. 92 Issue 1, p135
The two-dimensional electron gas in the surface layers of HgMnTe with inverted bands is studied for the first time experimentally and theoretically. It is shown that the structure of the investigated capacitance magnetooscillations in HgMnTe MOS structures is entirely similar to that observed in...