Selective epitaxial growth of submicron complex oxide structures by amorphous SrTiO3

Morales, P.; DiCiano, M.; Wei, J. Y. T.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192509
Academic Journal
A chemical-free technique for fabricating submicron complex oxide structures has been developed based on selective epitaxial growth. The crystallinity and hence the conductivity of the complex oxide is inhibited by amorphous SrTiO3 (STO). Using a combination of pulsed laser deposition and electron-beam lithography, amorphous STO barriers are first deposited on a single-crystal substrate. A thin film is then deposited on the patterned substrate with the amorphous STO barriers acting to electrically and physically isolate different regions of the film. Since no chemical or physical etchants come in contact with the deposited film, its integrity and stability are preserved. This technique has produced submicron YBa2Cu3O7-δ and La2/3Ca1/3MnO3 structures.


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