Effects of temperature on good rectifying characteristic of manganite-based p-n junction

Cai, Tian-Yi; Li, Zhen-Ya
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p192511
Academic Journal
The good rectifying characteristic of manganite-based p-n junction are reproduced. Different from conventional p-n junctions, the variation of electronic structure of doped manganite with temperature is considered. It is obtained that the diffusion potential of a manganite-based p-n junction decreases with the increasing temperature. It is in good agreement with experimental results.


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