Self-assembled growth and enhanced blue emission of SiOxNy-capped silicon nanowire arrays

Qiu, T.; Wu, X. L.; Wan, G. J.; Mei, Y. F.; Siu, G. G.; Chu, Paul K.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p193111
Academic Journal
Unique structured SiOxNy-capped Si nanowire arrays were fabricated via electroless metal deposition on α-SiOxNy-covered Si wafer in ionic silver HF solution through selective chemical etching. A self-assembled localized microscopic electrochemical cell model and a diffusion-limited aggregation process are associated with the formation of the SiOxNy-capped Si nanowire arrays. An enhanced blue photoluminescence band has been recorded. Emission and excitation spectral analyses suggest that generation of photoexcited carriers takes place mainly in the quantum confined Si nanowires, whereas their radiative recombination occurs in the Si–N binding states of SiOxNy nanocaps.


Related Articles

  • Photoluminescence origins of the porous silicon nanowire arrays. Lin, L. H.; Sun, X. Z.; Tao, R.; Li, Z. C.; Feng, J. Y.; Zhang, Z. J. // Journal of Applied Physics;Oct2011, Vol. 110 Issue 7, p073109 

    We investigate the photoluminescence (PL) behavior of the porous silicon nanowire (PSiNW) arrays synthesized via metal-assisted electroless etching method on the n-Si (100) substrate. Two PL bands with different origins dependent on the post-chemical treatments were detected. The red emission...

  • Electroless metal plating of microtubules: Effect of microtubule-associated proteins. Yi Yang; Constance, B.H.; Deymier, P. A.; Hoying, J.; Raghavan, S.; Zelinski, B. J. J. // Journal of Materials Science;Mar2004, Vol. 39 Issue 6, p1927 

    Microtubules (MTs) are self-assembled proteinaceous filaments with nanometer scale diameters and micrometer scale lengths. Their aspect ratio, the reversibility of their assembly and their ability to be metallized by electroless plating make them good candidates to serve as templates for the...

  • Spatially resolved photoluminescence study on T-shaped quantum wires fabricated by cleaved edge overgrowth method. Someya, Takao; Akiyama, Hidefumi; Sakaki, Hiroyuki // Journal of Applied Physics;3/1/1996, Vol. 79 Issue 5, p2522 

    Presents information on a study that fabricated GaAs T-shaped edge quantum wire (T-QWR) structures by the cleaved edge overgrowth method. Introduction to quantum wires; Design principle of the sample structures; Photoluminescence study of the samples.

  • Synthesis of highly aligned silicon oxide nanowires and their novel patterns. Hu, P.A.; Liu, Y.Q.; Wang, X.B. // Applied Physics A: Materials Science & Processing;2003, Vol. 77 Issue 6, p743 

    Highly aligned amorphous SiO[SUBx] nanowires with lengths of up to several hundred microns were synthesized by using a millimeter-sized droplet of elemental gallium as a catalyst. Gallium displays highly catalytic activity for the growth of SiO[SUBx] nanowires. Some novel patterns of aligned...

  • Directed growth of nickel silicide nanowires. Decker, C.A.; Solanki, R.; Freeouf, J.L.; Carruthers, J.R.; Evans, D.R. // Applied Physics Letters;2/23/2004, Vol. 84 Issue 8, p1389 

    Deposition of nickel silicide nanowires has been achieved in the temperature range of 320 to 420 °C by decomposition of silane on nickel surfaces. The substrates consisted of Ni foils and thin Ni films (∼10–100 nm) evaporated on 1-μm-thick layers of SiO[sub 2] predeposited on...

  • Nanocantilevers made of bent silicon carbide nanowire-in-silicon oxide nanocones. Ming Lin; Kian Ping Loh; Boothroyd, Chris; Anyan Du // Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5388 

    We report the plasma-assisted synthesis of nanocones on a nickel-coated silicon substrate using tetramethyl silane as the gas precursor. These nanocones consist of coaxially aligned, crystalline β-SiC nanowires surrounded by conical-shaped, amorphous silicon oxide precipitates. The propensity...

  • Si-assisted growth of InAs nanowires. Park, Hyun D.; Prokes, S. M.; Twigg, M. E.; Cammarata, Robert C.; Gaillot, Anne-Claire // Applied Physics Letters;11/27/2006, Vol. 89 Issue 22, p223125 

    The authors report on the growth of InAs nanowires using nanometer-sized Si clusters in a closed system without any metal catalyst. The growth was performed at 580 °C for 30 min using 1.3 nm thickness of SiOx. It is suggested that the nanowire growth occurred due to highly reactive...

  • Selective diffusion of gold nanodots on nanopatterned substrates realized by self-assembly of diblock copolymers. Garozzo, C.; Puglisi, R. A.; Bongiorno, C.; Scalese, S.; Rimini, E.; Lombardo, S. // Journal of Materials Research;1/28/2011, Vol. 26 Issue 2, p240 

    We investigated a simple and low-cost route for the formation of metallic nanodots on Si substrates ordered in size and position and laterally isolated by SiO2. The method was based on a two-step process: (i) the formation of a nanopattern of ordered cylindrical pores on oxidized Si substrates...

  • Tuning the surface conditioning of trapezoidally shaped silicon nanowires by (3-aminopropyl)triethoxysilane. Duţu, C. A.; Vlad, A.; Reckinger, N.; Flandre, D.; Raskin, J.-P.; Melinte, S. // Applied Physics Letters;1/13/2014, Vol. 104 Issue 2, p023502-1 

    We report on the electrical performance of silane-treated silicon nanowires configured as n+- p -n+ field effect transistors. The functionalization of the silicon oxide shell with (3-aminopropyl)triethoxysilane controls the formation of the conduction channel in the trapezoidal cross-section...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics