Formation of epitaxial β-Sn islands at the interface of SiO2/Si layers implanted with Sn ions

Lopes, J. M. J.; Zawislak, F. C.; Fichtner, P. F. P.; Papaléo, R. M.; Lovey, F. C.; Condó, A. M.; Tolley, A. J.
May 2005
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191914
Academic Journal
180 nm SiO2 layers on Si (100) were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature (900–1100 °C) annealing, an array of β-Sn islands epitaxially attached to the Si was observed at the SiO2/Si(100) interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2/Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.


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