TITLE

Formation of epitaxial β-Sn islands at the interface of SiO2/Si layers implanted with Sn ions

AUTHOR(S)
Lopes, J. M. J.; Zawislak, F. C.; Fichtner, P. F. P.; Papaléo, R. M.; Lovey, F. C.; Condó, A. M.; Tolley, A. J.
PUB. DATE
May 2005
SOURCE
Applied Physics Letters;5/9/2005, Vol. 86 Issue 19, p191914
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
180 nm SiO2 layers on Si (100) were implanted with Sn ions producing a profile with a peak concentration of 3 at. % at the middle of the oxide. After high temperature (900–1100 °C) annealing, an array of β-Sn islands epitaxially attached to the Si was observed at the SiO2/Si(100) interface due to the migration of the implanted Sn atoms. The breakdown of the planar SiO2/Si interface and the appearance of the island system is discussed in terms of the Sn–Si equilibrium properties. Our results reveal a new method to create a high density of nanosized islands with good uniformity in size and shape.
ACCESSION #
17164753

 

Related Articles

  • Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2/Si interfaces. Skarlatos, D.; Tsouroutas, P.; Vamvakas, V. Em.; Tsamis, C. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p103507 

    In this work we perform a systematic study of the dissolution of a dislocation loop layer under the influence of inert SiO2/Si and nitrogen-rich SiO2/Si interfaces. The composition of the dislocation loop layer was just after its formation 10%–20% Frank dislocation loops and...

  • Metal free growth and characterization of InAs1-xPx nanowires. Mandl, Bernhard; Stangl, Julian; Mårtensson, Thomas; Brehm, Moritz; Fromherz, Thomas; Bauer, Günther; Samuelson, Lars; Seifert, Werner // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p97 

    InAs nanowires have been grown without the use of Au or other metal particles as catalyst by metal-organic vapor phase epitaxy. The nanowires growth is initiated by a thin layer of SiOx. The wires exhibit a non-tapered shape with a hexagonal cross section. In addition to InAs also InAs1-xPx...

  • SiC Nanowires Synthesized by Rapidly Heating a Mixture of SiO and Arc-Discharge Plasma Pretreated Carbon Black. Feng-Lei Wang; Li-Ying Zhang; Ya-Fei Zhang // Nanoscale Research Letters;Jan2009, Vol. 4 Issue 1, p153 

    SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less...

  • Low-defect colorless Bi[sub 12]SiO[sub 20] grown by hydrothermal techniques. Harris, Meckie T.; Larkin, John J. // Applied Physics Letters;4/27/1992, Vol. 60 Issue 17, p2162 

    Investigates the growth of bismuth silicon oxide (BSO) crystals using the pressure-balanced hydrothermal technique. Absence of the deep-donor absorption shoulder in the undoped crystals; Use of BSO for optical signal processing; Factors attributed to the photochromic response and TSC signals in...

  • Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams. Ng, C. Y.; Chen, T. P.; Zhao, P.; Ding, L.; Liu, Y.; Tseng, Ampere A.; Fung, S. // Journal of Applied Physics;5/15/2006, Vol. 99 Issue 10, p106105 

    A nanocrystal Si (nc-Si) distributed in a narrow layer in the gate oxide close to the gate is synthesized with Si ion implantation at 2 keV, and the electrical characteristics of the nc-Si structure are investigated. The onset voltage of the Fowler-Nordheim tunneling of the structure is lower...

  • Morphology tuning in nontemplated solvothermal synthesis of titania nanoparticles.  // Journal of Materials Research;May2006, Vol. 21 Issue 5, p4 

    Nanoparticles and nanocrystalline particles of pure anatase titania (TiO2) were synthesized by solvothermal processing of TiCl4 ethanol and isopropanol solutions at 120 to 200 °C. This one-step and nonsurfactant approach is versatile and the morphology tuning can be achieved by manipulating...

  • Equilibrium crystal shape of GaAs in nanoscale patterned growth. Lee, S.C.; Brueck, S.R.J. // Journal of Applied Physics;7/15/2004, Vol. 96 Issue 2, p1214 

    The equilibrium crystal shape (ECS) of GaAs homoepitaxially grown on a nanoscale SiO2-patterned (001) plane by molecular beam epitaxy is investigated. A GaAs epilayer selectively grown on a nanoscale area bounded by a circular SiO2 mask undergoes faceting, resulting in a pyramidal shape with...

  • Role of graphene/substrate interface on the local transport properties of the two-dimensional electron gas. Sonde, S.; Giannazzo, F.; Vecchio, C.; Yakimova, R.; Rimini, E.; Raineri, V. // Applied Physics Letters;9/27/2010, Vol. 97 Issue 13, p132101 

    The electron mean free path (lgr) is 'locally' evaluated by scanning capacitance spectroscopy on graphene obtained with different preparation methods and on different substrates, i.e., graphene exfoliated from highly oriented pyrolitic graphite (HOPG) and deposited (DG) on 4H-SiC(0001) and on...

  • Reversible growth-mode transition in SrRuO3 epitaxy. Bachelet, R.; Sánchez, F.; Santiso, J.; Fontcuberta, J. // Applied Physics Letters;10/13/2008, Vol. 93 Issue 15, p151916 

    It is known that a transition from layer-by-layer (LbL) to step-flow (SF) can occur at the earliest stages of SrRuO3 growth on SrTiO3(001). We report here the observation of a reversible transition between these two-dimensional growth modes that can occur at any SrRuO3 thickness, tuned by short...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics